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Title: Stretchable HfO₂-based resistive switching memory using the wavy structured design
Authors: Wang, Ming
Guo, Kexin
Cheng, Hongfei
Keywords: Engineering::Aeronautical engineering
Issue Date: 2020
Source: Wang, M., Guo, K. & Cheng, H. (2020). Stretchable HfO₂-based resistive switching memory using the wavy structured design. IEEE Electron Device Letters, 41(7), 1118-1121.
Project: MOE2015-T2-2-60 
Journal: IEEE Electron Device Letters 
Abstract: In this letter, we report a stretchable HfO2-based resistive switching memory device utilizing the wavy structured strategy. The fabricated Cu/HfO2/Au device shows reliable and reversible resistive switching behaviors up to a stretching strain of 20%. After being released, the reproducible memory characteristics of the device can still be maintained. The statistical resistive switching parameters under various stretching strains in the range from 0% to 20% are counted, which exhibit a large OFF/ON resistance ratio (103), low operation voltage (2 V), good endurance and retention (104s), demonstrating the good and reliable stretchable memory characteristics. Moreover, the device-to-device distributions are carried out in these stretched states, further validating the device robustness on stretching strains. Our results show a promising approach to achieve the stretchable memory by rendering inorganic-based resistive switching devices with the wavy structure, which extends rigid and brittle memory towards future highly flexible, even stretchable data storage and computing.
ISSN: 0741-3106
DOI: 10.1109/LED.2020.2995201
Schools: School of Materials Science and Engineering 
School of Mechanical and Aerospace Engineering 
Rights: © 2020 IEEE. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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