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Title: Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain
Authors: Burt, Daniel
Joo, Hyo-Jun
Kim, Youngmin
Jung, Yongduck
Chen, Melvina
Luo, Manlin
Kang, Dong-Ho
Assali, Simone
Zhang, Lin
Son, Bongkwon
Fan, Weijun
Moutanabbir, Oussama
Ikonic, Zoran
Tan, Chuan Seng
Huang, Yi-Chiau
Nam, Donguk
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Source: Burt, D., Joo, H., Kim, Y., Jung, Y., Chen, M., Luo, M., Kang, D., Assali, S., Zhang, L., Son, B., Fan, W., Moutanabbir, O., Ikonic, Z., Tan, C. S., Huang, Y. & Nam, D. (2022). Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain. Applied Physics Letters, 120(20), 202103-.
Project: RG115/21 
MOE2018- T2-2-011(S) 
Journal: Applied Physics Letters 
Abstract: GeSn alloys are a promising emerging complementary metal-oxide-semiconductor compatible technology for applications in photonics and electronics. However, the unavoidable intrinsic compressive strain introduced during epitaxial growth has prevented researchers from pushing the performance of GeSn devices to the limit and realizing real-world applications. In this paper, we present a straightforward geometric strain-inversion technique that harnesses the harmful compressive strain to achieve beneficial tensile strain in GeSn nanowires, drastically increasing the directness of the band structure. We achieve ∼2.67% uniaxial tensile strain in ∼120 nm wide nanowires, surpassing other values reported thus far. Unique pseudo-superlattices comprising of indirect and direct bandgap GeSn are demonstrated in a single material only by applying a periodic tensile strain. Improved directness in tensile-strained GeSn significantly enhances the photoluminescence by a factor of ∼2.5. This work represents a way to develop scalable band-engineered GeSn nanowire devices with lithographic design flexibility. This technique can be potentially applied to any layer with an intrinsic compressive strain, creating opportunities for unique tensile strained materials with diverse electronic and photonic applications.
ISSN: 0003-6951
DOI: 10.1063/5.0087477
Schools: School of Electrical and Electronic Engineering 
Rights: © 2022 Author(s). All rights reserved. This paper was published by AIP Publishing in Applied Physics Letters and is made available with permission of Author(s).
Fulltext Permission: open
Fulltext Availability: With Fulltext
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