MoO₃-MoS₂ vertical heterostructures synthesized via one-step CVD process for optoelectronics

Abstract

The 2D transitional metal oxides/transition-metal dichalcogenides vertical heterostructures of MoO3–MoS2 are successfully synthesized on SiO2/Si substrates via one-step chemical vapor deposition process. The vertical MoO3–MoS2 heterostructures exhibit the average size of ∼20 µm and the thickness down to ∼10 nm. Moreover, the phototransistor device based on MoO3–MoS2 heterostructures presents responsivity of 5.41 × 103 A W−1, detectivity of 0.89 × 1010 Jones and external quantum efficiency of 1263.4%, respectively, under a 532 nm wavelength light. This study affords a new path to simplify process of fabricating MoO3–MoS2 vertical heterostructures for electronic and optoelectronic applications.