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Title: MoO₃-MoS₂ vertical heterostructures synthesized via one-step CVD process for optoelectronics
Authors: Guo, Yuxi
Kang, Lixing
Song, Pin
Zeng, Qingsheng
Tang, Bijun
Yang, Jiefu
Wu, Yao
Tian, Dan
Xu, Manzhang
Zhao, Wu
Qi, Xiaofei
Zhang, Zhiyong
Liu, Zheng
Keywords: Engineering::Materials
Issue Date: 2021
Source: Guo, Y., Kang, L., Song, P., Zeng, Q., Tang, B., Yang, J., Wu, Y., Tian, D., Xu, M., Zhao, W., Qi, X., Zhang, Z. & Liu, Z. (2021). MoO₃-MoS₂ vertical heterostructures synthesized via one-step CVD process for optoelectronics. 2D Materials, 8(3), 035036-.
Project: NRF-CRP21-2018-0007
Journal: 2D Materials
Abstract: The 2D transitional metal oxides/transition-metal dichalcogenides vertical heterostructures of MoO3–MoS2 are successfully synthesized on SiO2/Si substrates via one-step chemical vapor deposition process. The vertical MoO3–MoS2 heterostructures exhibit the average size of ∼20 µm and the thickness down to ∼10 nm. Moreover, the phototransistor device based on MoO3–MoS2 heterostructures presents responsivity of 5.41 × 103 A W−1, detectivity of 0.89 × 1010 Jones and external quantum efficiency of 1263.4%, respectively, under a 532 nm wavelength light. This study affords a new path to simplify process of fabricating MoO3–MoS2 vertical heterostructures for electronic and optoelectronic applications.
ISSN: 2053-1583
DOI: 10.1088/2053-1583/abfede
Schools: School of Materials Science and Engineering 
Rights: © 2021 IOP Publishing Ltd. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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