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Title: Controlled growth of large-sized and phase-selectivity 2D GaTe crystals
Authors: Liu, Mingqiang
Yang, Shuo
Han, Mao
Feng, Simin
Wang, Gui-Gen
Dang, Leyang
Zou, Bo
Cai, Yawei
Sun, Huarui
Yu, Jie
Han, Jie-Cai
Liu, Zheng
Keywords: Engineering::Materials
Issue Date: 2021
Source: Liu, M., Yang, S., Han, M., Feng, S., Wang, G., Dang, L., Zou, B., Cai, Y., Sun, H., Yu, J., Han, J. & Liu, Z. (2021). Controlled growth of large-sized and phase-selectivity 2D GaTe crystals. Small (Weinheim An Der Bergstrasse, Germany), 17(21), 2007909-.
Project: 19283074
Journal: Small (Weinheim an der Bergstrasse, Germany)
Abstract: GaTe has recently attracted significant interest due to its direct bandgap and unique phase structure, which makes it a good candidate for optoelectronics. However, the controllable growth of large-sized monolayer and few-layer GaTe with tunable phase structures remains a great challenge. Here the controlled growth of large-sized GaTe with high quality, chemical uniformity, and good reproducibility is achieved through liquid-metal-assisted chemical vapor deposition method. By using liquid Ga, the rapid growth of 2D GaTe flakes with high phase-selectivity can be obtained due to its reduced reaction temperature. In addition, the method is used to synthesize many Ga-based 2D materials and their alloys, showing good universality. Raman spectra suggest that the as-grown GaTe own a relatively weak van der Waals interaction, where monoclinic GaTe displays highly-anisotropic optical properties. Furthermore, a p-n junction photodetector is fabricated using GaTe as a p-type semiconductor and 2D MoSe2 as a typical n-type semiconductor. The GaTe/MoSe2 heterostructure photodetector exhibits large photoresponsivity of 671.52 A W-1 and high photo-detectivity of 1.48 × 1010 Jones under illumination, owing to the enhanced light absorption and good quality of as-grown GaTe. These results indicate that 2D GaTe is a promising candidate for electronic and photoelectronic devices.
ISSN: 1613-6810
DOI: 10.1002/smll.202007909
Schools: School of Materials Science and Engineering 
Rights: © 2021 Wiley-VCH GmbH. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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