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dc.contributor.authorCoester, Birteen_US
dc.contributor.authorWong, Grayson Dao Hweeen_US
dc.contributor.authorXu, Zhanen_US
dc.contributor.authorTang, Jiaxuanen_US
dc.contributor.authorGan, Weiliangen_US
dc.contributor.authorLew, Wen Siangen_US
dc.identifier.citationCoester, B., Wong, G. D. H., Xu, Z., Tang, J., Gan, W. & Lew, W. S. (2021). Enhanced spin Hall conductivity in tungsten-copper alloys. Journal of Magnetism and Magnetic Materials, 523, 167545-.
dc.description.abstractWe report on the enhancement of the spin Hall conductivity in tungsten by alloying with copper, measured by using the spin-torque ferromagnetic resonance technique. The alloying leads to an increase in spin-dependent scattering events and results in an enhancement of the contributing extrinsic spin Hall effects. The measured damping property shows a slight increase with higher tungsten concentration, due to spin current losses from the ferromagnetic layer into the tungsten-copper alloy. At a tungsten concentration of 60%, the spin Hall conductivity reaches a maximum of 3.68±0.68×105Ω-1m-1, corresponding to an enhancement of 120% compared to the pure tungsten sample. At the same concentration, the ratio of the spin Hall angle to the damping of the ferromagnetic layer, which offers a quick estimation for the critical switching current density, is found to be four times smaller as compared to pure tungsten.en_US
dc.description.sponsorshipAgency for Science, Technology and Research (A*STAR)en_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.relationNRF-CRP9-2011- 01en_US
dc.relationNRF2015- IIP001- 001en_US
dc.relation.ispartofJournal of Magnetism and Magnetic Materialsen_US
dc.rights© 2020 Elsevier B.V. All rights reserved.en_US
dc.titleEnhanced spin Hall conductivity in tungsten-copper alloysen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.contributor.organizationGlobalFoundries Singapore Pte Ltden_US
dc.subject.keywordsThin Filmen_US
dc.subject.keywordsSpin Hall Effecten_US
dc.description.acknowledgementThe work was supported by the Singapore National Research Foundation, under a Competitive Research Programme (Non-volatile Magnetic Logic and Memory Integrated Circuit Devices, NRF-CRP9-2011- 01), and an Industry-IHL Partnership Program (NRF2015- IIP001- 001). The support from an RIE2020 ASTAR AME IAF-ICP Grant (No. I1801E0030) is also acknowledged.en_US
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