Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/160333
Title: Nano-engineering the evolution of skyrmion crystal in synthetic antiferromagnets
Authors: Ma, Mangyuan
Huang, Ke
Li, Yong
Li, Sihua
Feng, Qiyuan
Ang, Calvin Ching Ian
Jin, Tianli
Lu, Yalin
Lu, Qingyou
Lew, Wen Siang
Ma, Fusheng
Wang, Renshaw Xiao
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Source: Ma, M., Huang, K., Li, Y., Li, S., Feng, Q., Ang, C. C. I., Jin, T., Lu, Y., Lu, Q., Lew, W. S., Ma, F. & Wang, R. X. (2022). Nano-engineering the evolution of skyrmion crystal in synthetic antiferromagnets. Applied Physics Reviews, 9(2), 021404-. https://dx.doi.org/10.1063/5.0081455
Project: MOE-T2EP50120-0006
MOE-T2EP50220-0016
A20E5c0094
CRP9–2011-01
I1801E0030
A1687b0033
Journal: Applied Physics Reviews
Abstract: The evolution of skyrmion crystal encapsulates skyrmion critical behaviors, such as nucleation, deformation and annihilation. Here, we achieve a tunable evolution of artificial skyrmion crystal in nanostructured synthetic antiferromagnet multilayers, which are comprised of perpendicular magnetic multilayers and nanopatterned arrays of magnetic nanodots. The out-of-plane magnetization hysteresis loops and first-order reversal curves show that the nucleation and annihilation of the artificial skyrmion can be controlled by tuning the diameter of and spacing between the nanodots. Moreover, when the bottom layer thickness increases, the annihilation of skyrmion shifts from evolving into a ferromagnetic spin texture to evolving into an antiferromagnetic spin texture. Most significantly, non-volatile multiple states are realized at zero magnetic field via controlling the proportion of the annihilated skyrmions in the skyrmion crystal. Our results demonstrate the tunability and flexibility of the artificial skyrmion platform, providing a promising route to achieve skyrmion-based multistate devices, such as neuromorphic spintronic devices.
URI: https://hdl.handle.net/10356/160333
ISSN: 1931-9401
DOI: 10.1063/5.0081455
Schools: School of Physical and Mathematical Sciences 
School of Electrical and Electronic Engineering 
Rights: © 2022 Author(s). All rights reserved. This paper was published by AIP Publishing and is made available with permission of Author(s).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
SPMS Journal Articles

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