Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/160344
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dc.contributor.authorSia, Brian Jia Xuen_US
dc.contributor.authorLi, Xiangen_US
dc.contributor.authorWang, Jiaweien_US
dc.contributor.authorWang, Wanjunen_US
dc.contributor.authorQiao, Zhongliangen_US
dc.contributor.authorGuo, Xinen_US
dc.contributor.authorLee, Chee Weien_US
dc.contributor.authorSasidharan, Asheshen_US
dc.contributor.authorGunasagar, S.en_US
dc.contributor.authorLittlejohns, Callum G.en_US
dc.contributor.authorLiu, Chongyangen_US
dc.contributor.authorReed, Graham T.en_US
dc.contributor.authorAng, Kian Siongen_US
dc.contributor.authorWang, Hongen_US
dc.date.accessioned2022-07-19T08:05:03Z-
dc.date.available2022-07-19T08:05:03Z-
dc.date.issued2022-
dc.identifier.citationSia, B. J. X., Li, X., Wang, J., Wang, W., Qiao, Z., Guo, X., Lee, C. W., Sasidharan, A., Gunasagar, S., Littlejohns, C. G., Liu, C., Reed, G. T., Ang, K. S. & Wang, H. (2022). Wafer-scale demonstration of low-loss (∼0.43 dB/cm), high-bandwidth (>38 GHz), silicon photonics platform operating at the C-band. IEEE Photonics Journal, 14(3), 6628609-. https://dx.doi.org/10.1109/JPHOT.2022.3170366en_US
dc.identifier.issn1943-0655en_US
dc.identifier.urihttps://hdl.handle.net/10356/160344-
dc.description.abstractThe key advantage of silicon photonics comes from its potential for large scale integration, in a low-cost and scalable fashion. This has sustained the growth in the area despite disadvantages such as the lack of a monolithic light source, or the absence of a second order non-linear response (χ(2)). Thus far, the work in the field has focused on reporting individual devices from a single die, with excellent performances. Wafer-level results, an area which has not been addressed sufficiently, is a critical aspect of silicon photonics and will provide the community with information regarding scalability and variation, which will be the key differentiating advantage of silicon photonics over other photonic platforms. In this work, we report the development of a low-loss, high-bandwidth C-band silicon photonic platform on a 200 mm CMOS-compatible process line, demonstrating wafer-level performance in the process. Ultra-low waveguide propagation loss with median values as low as 0.43 dB/cm has been achieved. Silicon Mach-Zehnder and microring modulators with median bandwidth of 38.5 and 43 GHz respectively are presented. Finally, germanium waveguide-integrated photodetectors with median bandwidth of 43 GHz are reported. The results reported in this work are comparable to prior demonstrations concerning individual devices. The baseline designs on this platform presented in this work can be accessed commercially from CompoundTek.en_US
dc.description.sponsorshipNanyang Technological Universityen_US
dc.description.sponsorshipNational Research Foundation (NRF)en_US
dc.language.isoenen_US
dc.relationRCA #020263-00001en_US
dc.relationNRFCRP12-2013-04en_US
dc.relation.ispartofIEEE Photonics Journalen_US
dc.rights© 2022 The Author(s). This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see https://creativecommons.org/licenses/by/4.0/en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleWafer-scale demonstration of low-loss (∼0.43 dB/cm), high-bandwidth (>38 GHz), silicon photonics platform operating at the C-banden_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.researchTemasek Laboratories @ NTUen_US
dc.identifier.doi10.1109/JPHOT.2022.3170366-
dc.description.versionPublished versionen_US
dc.identifier.scopus2-s2.0-85129587985-
dc.identifier.issue3en_US
dc.identifier.volume14en_US
dc.identifier.spage6628609en_US
dc.subject.keywordsModulatoren_US
dc.subject.keywordsPhotodetectoren_US
dc.description.acknowledgementThis work was supported in part by the NTU-CompoundTek Research Collaboration Agreement under Grant RCA #020263-00001 and in part by the National Research Foundation of Singapore under Grant NRFCRP12-2013-04.en_US
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