Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/160588
Title: Electroreflectance of Cu₂(Cd₁-ₓ,Znₓ)SnS₄ thin film solar cells
Authors: Levcenko, S.
Hadke, Shreyash Sudhakar
Wong, Lydia Helena
Unold, T.
Keywords: Engineering::Materials
Issue Date: 2021
Source: Levcenko, S., Hadke, S. S., Wong, L. H. & Unold, T. (2021). Electroreflectance of Cu₂(Cd₁-ₓ,Znₓ)SnS₄ thin film solar cells. Physical Review Materials, 5(10), 104605-1-104605-6. https://dx.doi.org/10.1103/PhysRevMaterials.5.104605
Journal: Physical Review Materials 
Abstract: The effect of Cu off-stoichiometry and Zn alloying on the fundamental absorption region of (CCTS) absorbers in complete solar cells has been investigated using electroreflectance (ER) spectroscopy at room temperature. It is found that ER spectra consist of contributions from two different sources, one of which corresponds to band gap transition in the absorber layer and the other to the interference effect in the window layer. ER measurements on CCTS samples reveal a near-constant band gap energy of 1.37-1.38 eV and a relatively small broadening of 60-90 meV in the probed compositional range, in contrast to related kesterites . The analysis of the band gap in alloys yields a quadratic dependence on Zn content with a bowing parameter of 0.4 eV. Finally, the broadening parameters of the band gap transitions as well as their compositional dependence are evaluated and discussed.
URI: https://hdl.handle.net/10356/160588
ISSN: 2475-9953
DOI: 10.1103/PhysRevMaterials.5.104605
Schools: School of Materials Science and Engineering 
Organisations: Campus for Research Excellence and Technological Enterprise (CREATE) 
Rights: © 2021 American Physical Society. All rights reserved. This paper was published in Physical Review Materials and is made available with permission of American Physical Society.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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