Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/161232
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dc.contributor.authorPeng, Yuanen_US
dc.contributor.authorTong, Zhiboen_US
dc.contributor.authorYang, Yezien_US
dc.contributor.authorSun, Changqingen_US
dc.date.accessioned2022-08-22T02:44:14Z-
dc.date.available2022-08-22T02:44:14Z-
dc.date.issued2021-
dc.identifier.citationPeng, Y., Tong, Z., Yang, Y. & Sun, C. (2021). The common and intrinsic skin electric-double-layer (EDL) and its bonding characteristics of nanostructures. Applied Surface Science, 539, 148208-. https://dx.doi.org/10.1016/j.apsusc.2020.148208en_US
dc.identifier.issn0169-4332en_US
dc.identifier.urihttps://hdl.handle.net/10356/161232-
dc.description.abstractWe show that nanocrystals share a common and intrinsic skin electric-double-layer (EDL). The EDL is determined to be 2.14 regular-bond-length thick using differential phonon spectroscopy that distills phonon abundance transiting from the core region to the EDL of the sized crystals. Theoretical reproduction of the size-resolved Raman shift for Si, CeO₂, and SnO₂ nanocrystals, elasticity of ZnO, and the XPS 2p energy shift, band gap expansion and melting point shift of Si crystals confirmed the universality of the EDL of which bonds are shorter and stronger than those inside the bulk or the particle core interior. The EDL bond contraction and the associated electron entrapment and polarization originate, and the EDL volume quantifies the size dependency of nanostructures while the electron entrapment or polarization entitles the undercoordinated single or edge atoms with properties that a bulk does never show.en_US
dc.language.isoenen_US
dc.relation.ispartofApplied Surface Scienceen_US
dc.rights© 2020 Elsevier B.V. All rights reserved.en_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleThe common and intrinsic skin electric-double-layer (EDL) and its bonding characteristics of nanostructuresen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.researchMicro- and Nanoelectronic Research Centeren_US
dc.identifier.doi10.1016/j.apsusc.2020.148208-
dc.identifier.scopus2-s2.0-85094192144-
dc.identifier.volume539en_US
dc.identifier.spage148208en_US
dc.subject.keywordsNanostrctureen_US
dc.subject.keywordsAtomic Undercoordinationen_US
dc.description.acknowledgementFinancial support received from the National Natural Science Foundation (No 21273191) of China, is gratefully acknowledged.en_US
item.grantfulltextnone-
item.fulltextNo Fulltext-
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