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Title: Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance
Authors: Izzat Aziz
Ciou, Jing-Hao
Kongcharoen, Haruethai
Lee,Pooi See
Keywords: Engineering::Materials
Issue Date: 2022
Source: Izzat Aziz, Ciou, J., Kongcharoen, H. & Lee, P. S. (2022). Top electrode modulated W/Ag/MgO/Au resistive random access memory for improved electronic synapse performance. Journal of Applied Physics, 132(1), 014502-.
Project: I1801E0030 
Journal: Journal of Applied Physics 
Abstract: Resistive random access memory (ReRAM) is touted to replace silicon-based flash memory due to its low operating voltage, fast access speeds, and the potential to scale down to nm range for ultra-high density storage. In addition, its ability to retain multi-level resistance states makes it suitable for neuromorphic computing application. Here, we develop a cationic ReRAM with a sputtered MgO as the insulating layer. The resistive switching properties of the Ag/MgO/Au ReRAM stack reveal a strong dependence on the sputtering conditions of MgO. Due to the highly stable sputtered MgO, repeatable resistive switching memory is achieved with a low ON voltage of ∼0.7 V and a memory window of ∼1 × 105. Limiting Ag diffusion through a modified top electrode in the W/Ag/MgO/Au stack significantly reduces the abruptness of resistive switching, thereby demonstrating analog switching capability. This phenomenon is evident in the improved linearity and symmetry of potentiation and depression weight modulation pulses, demonstrating ideal Hebbian synaptic learning rules.
ISSN: 0021-8979
DOI: 10.1063/5.0096620
Schools: School of Materials Science and Engineering 
Rights: © 2022 Author(s).]. All rights reserved. This paper was published by AIP Publishing in Journal of Applied Physics and is made available with permission of Author(s).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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