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Title: Epitaxial indium antimonide for multiband photodetection from IR to millimeter/terahertz wave
Authors: Tong, Jinchao
Luo, Heng
Suo, Fei
Zhang, Tianning
Zhang, Dawei
Zhang, Dao Hua
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Source: Tong, J., Luo, H., Suo, F., Zhang, T., Zhang, D. & Zhang, D. H. (2022). Epitaxial indium antimonide for multiband photodetection from IR to millimeter/terahertz wave. Photonics Research, 10(5), 1194-1201.
Project: SERC 1720700038 
SERC A1883c0002 
Journal: Photonics Research 
Abstract: Conventional photodetection converts light into electrical signals only in a single electromagnetic waveband. Multiband detection technology is highly desirable because it can handle multispectral information discrimination, identification, and processing. Current epitaxial solid-state multiband detection technologies are mainly within the IR wave range. Here, we report epitaxial indium antimonide on gallium arsenide for IR and millimeter/terahertz wave multiband photodetection. The photoresponse originates from interband transition in optoelectrical semiconductors for IR wave, and surface plasmon polaritons induced nonequilibrium electrons for a millimeter/terahertz wave. The detector shows a strong response for an IR wave with a cutoff wavelength of 6.85 μm and a blackbody detectivity of 1.8 × 109 Jones at room temperature. For a millimeter/terahertz wave, the detector demonstrates broadband detection from 0.032 THz (9.4 mm) to 0.330 THz (0.9 mm); that is, from Ka to the W and G bands, with a noise equivalent power of 1.0 × 10−13 W Hz−1∕2 at 0.270 THz (1.1 mm) at room temperature. The detection performance is an order of magnitude better while decreasing the temperature to 170 K, the thermoelectric cooling level. Such detectors, capable of large scale and low cost, are promising for advanced uncooled multiband detection and imaging systems.
ISSN: 2327-9125
DOI: 10.1364/PRJ.444354
Schools: School of Electrical and Electronic Engineering 
Rights: © 2022 Chinese Laser Press. This paper was published in Photonics Research and is made available with permission of Chinese Laser Press.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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