Please use this identifier to cite or link to this item:
Full metadata record
DC FieldValueLanguage
dc.contributor.authorClark, Oliver J.en_US
dc.contributor.authorWadgaonkar, Indrajiten_US
dc.contributor.authorFreyse, Friedrichen_US
dc.contributor.authorSpringholz, Guntheren_US
dc.contributor.authorBattiato, Marcoen_US
dc.contributor.authorSánchez-Barriga, Jaimeen_US
dc.identifier.citationClark, O. J., Wadgaonkar, I., Freyse, F., Springholz, G., Battiato, M. & Sánchez-Barriga, J. (2022). Ultrafast Thermalization Pathways of Excited Bulk and Surface States in the Ferroelectric Rashba Semiconductor GeTe. Advanced Materials, 34(24), e2200323-.
dc.description.abstractA large Rashba effect is essential for future applications in spintronics. Particularly attractive is understanding and controlling nonequilibrium properties of ferroelectric Rashba semiconductors. Here, time- and angle-resolved photoemission is utilized to access the ultrafast dynamics of bulk and surface transient Rashba states after femtosecond optical excitation of GeTe. A complex thermalization pathway is observed, wherein three different timescales can be clearly distinguished: intraband thermalization, interband equilibration, and electronic cooling. These dynamics exhibit an unconventional temperature dependence: while the cooling phase speeds up with increasing sample temperature, the opposite happens for interband thermalization. It is demonstrated how, due to the Rashba effect, an interdependence of these timescales on the relative strength of both electron-electron and electron-phonon interactions is responsible for the counterintuitive temperature dependence, with spin-selection constrained interband electron-electron scatterings found both to dominate dynamics away from the Fermi level, and to weaken with increasing temperature. These findings are supported by theoretical calculations within the Boltzmann approach explicitly showing the opposite behavior of all relevant electron-electron and electron-phonon scattering channels with temperature, thus confirming the microscopic mechanism of the experimental findings. The present results are important for future applications of ferroelectric Rashba semiconductors and their excitations in ultrafast spintronics.en_US
dc.description.sponsorshipNanyang Technological Universityen_US
dc.relation.ispartofAdvanced Materialsen_US
dc.rights© 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.en_US
dc.titleUltrafast Thermalization Pathways of Excited Bulk and Surface States in the Ferroelectric Rashba Semiconductor GeTeen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.description.versionPublished versionen_US
dc.subject.keywordsFerroelectric Semiconductorsen_US
dc.subject.keywordsRashba Effecten_US
dc.description.acknowledgementJ.S.-B. acknowledges financial support from the Impuls- und Vernetzungsfonds der Helmholtz-Gemeinschaft under grant No. HRSF-0067. I.W. and M.B. acknowledge financial support from the Nanyang Technological University, NAP-SUG. G.S. acknowledges financial support by the Austrian Science Fund (FWF), Projects No. P30960-N27 and I 4493-N. Open access funding enabled and organized by Projekt DEAL.en_US
item.fulltextWith Fulltext-
Appears in Collections:SPMS Journal Articles

Page view(s)

Updated on Feb 3, 2023


Updated on Feb 3, 2023

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.