Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/162265
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dc.contributor.authorWang, Pingen_US
dc.contributor.authorYang, Yangen_US
dc.contributor.authorPan, Eren_US
dc.contributor.authorLiu, Fucaien_US
dc.contributor.authorAjayan, Pulickel M.en_US
dc.contributor.authorZhou, Jiadongen_US
dc.contributor.authorLiu, Zhengen_US
dc.date.accessioned2022-10-11T05:21:39Z-
dc.date.available2022-10-11T05:21:39Z-
dc.date.issued2022-
dc.identifier.citationWang, P., Yang, Y., Pan, E., Liu, F., Ajayan, P. M., Zhou, J. & Liu, Z. (2022). Emerging phases of layered metal chalcogenides. Small, 18(13), e2105215-. https://dx.doi.org/10.1002/smll.202105215en_US
dc.identifier.issn1613-6810en_US
dc.identifier.urihttps://hdl.handle.net/10356/162265-
dc.description.abstractLayered metal chalcogenides, as a "rich" family of 2D materials, have attracted increasing research interest due to the abundant choices of materials with diverse structures and rich electronic characteristics. Although the common metal chalcogenide phases such as 2H and 1T have been intensively studied, many other unusual phases are rarely explored, and some of these show fascinating behaviors including superconductivity, ferroelectrics, ferromagnetism, etc. From this perspective, the unusual phases of metal chalcogenides and their characteristics, as well as potential applications are introduced. First, the unusual phases of metal chalcogenides from different classes, including transition metal dichalcogenides, magnetic element-based chalcogenides, and metal phosphorus chalcogenides, are discussed, respectively. Meanwhile, their excellent properties of different unusual phases are introduced. Then, the methods for producing the unusual phases are discussed, specifically, the stabilization strategies during the chemical vapor deposition process for the unusual phase growth are discussed, followed by an outlook and discussions on how to prepare the unusual phase metal dichalcogenides in terms of synthetic methodology and potential applications.en_US
dc.description.sponsorshipAgency for Science, Technology and Research (A*STAR)en_US
dc.description.sponsorshipMinistry of Education (MOE)en_US
dc.language.isoenen_US
dc.relationMOE2018-T3-1-002en_US
dc.relationRG7/18en_US
dc.relationMOE2015-T2-2-007en_US
dc.relationMOE2016-T2-2-153en_US
dc.relationMOE2017-T2-2-136en_US
dc.relationMOE2018-T3-1-002en_US
dc.relation.ispartofSmallen_US
dc.rights© 2021 Wiley-VCH GmbH. All rights reserved.en_US
dc.subjectEngineering::Materialsen_US
dc.subjectEngineering::Electrical and electronic engineeringen_US
dc.titleEmerging phases of layered metal chalcogenidesen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.identifier.doi10.1002/smll.202105215-
dc.identifier.pmid34923740-
dc.identifier.scopus2-s2.0-85121441240-
dc.identifier.issue13en_US
dc.identifier.volume18en_US
dc.identifier.spagee2105215en_US
dc.subject.keywordsChemical Vapor Depositionen_US
dc.subject.keywordsTransitional Metals Dichalcogenidesen_US
dc.description.acknowledgementThis research was supported by the fund of Beijing Institute of Technology (No. 2021CX11013 and No. 3180011182156). This research was supported by the Ministry of Education, Singapore, under its MOE AcRF Tier 3 Award MOE2018-T3-1-002, MOE Tier 1 RG7/18, MOE Tier 2 MOE2015-T2-2-007, MOE2016-T2-2-153, MOE2017-T2-2-136, MOE Tier 3 MOE2018-T3-1-002, and A*Star QTE programme. This work was also sponsored by Sichuan Province Key Laboratory of Display Science and Technology.en_US
item.fulltextNo Fulltext-
item.grantfulltextnone-
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