Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/162301
Title: Enhanced tunneling magnetoresistance effect via ferroelectric control of interface electronic/magnetic reconstructions
Authors: Chi, Xiao
Guo, Rui
Xiong, Juxia
Ren, Lizhu
Peng, Xinwen
Tay, Beng Kang
Chen, Jingsheng
Keywords: Engineering::Electrical and electronic engineering
Engineering::Materials
Issue Date: 2021
Source: Chi, X., Guo, R., Xiong, J., Ren, L., Peng, X., Tay, B. K. & Chen, J. (2021). Enhanced tunneling magnetoresistance effect via ferroelectric control of interface electronic/magnetic reconstructions. ACS Applied Materials and Interfaces, 13(47), 56638-56644. https://dx.doi.org/10.1021/acsami.1c15836
Project: MOE2018-T2-2-043
MOE2019-T2-2-075
A1983C0036
11801E0036
Journal: ACS Applied Materials and Interfaces 
Abstract: Magnetic tunnel junctions (MTJs) with tunable tunneling magnetoresistances (TMR) have already been proven to have great potential for spintronics. Especially, when ferroelectric materials are used as insulating barriers, more novel functions of MTJs can be realized due to interface magnetoelectric coupling. Here, we demonstrate a very large ferroelectric modulation of TMR (as high as 570% in low-resistance state) in the ferroelectric/magnetic La0.5Sr0.5MnO3/BaTiO3 (LSMO/BTO) junctions and find robust interfacial electronic and magnetic reconstructions via ferroelectric polarization switching. Through electrical, magnetic, and optical measurements combined with X-ray absorption and magnetic circular dichroism, we reveal that the interfacial electronic and magnetic (ferromagnetic/antiferromagnetic phase transition) reconstructions originate from strong electromagnetic coupling between BTO and LSMO at the interface and are driven by the modulation of hole/electron doping at the interface of LSMO/BTO through ferroelectric polarization switching. As a result, the ferroelectrically controlled interface barrier height and width and spin filter effect enable a giant electrical modulation of TMR. Our results shed new light on the intrinsic mechanisms governing magnetoelectric coupling and offering a new route to enhance magnetoelectric coupling for spin control in spintronic devices.
URI: https://hdl.handle.net/10356/162301
ISSN: 1944-8244
DOI: 10.1021/acsami.1c15836
Rights: © 2021 American Chemical Society. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles
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