Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/162308
Title: Spin reflection-induced field-free magnetization switching in perpendicularly magnetized Mgo/Pt/Co heterostructures
Authors: Jin, Tianli
Lim, Gerard Joseph
Poh, Han Yin
Wu, Shuo
Tan, Funan
Lew, Wen Siang
Keywords: Science::Physics
Issue Date: 2022
Source: Jin, T., Lim, G. J., Poh, H. Y., Wu, S., Tan, F. & Lew, W. S. (2022). Spin reflection-induced field-free magnetization switching in perpendicularly magnetized Mgo/Pt/Co heterostructures. ACS Applied Materials and Interfaces, 14(7), 9781-9787. https://dx.doi.org/10.1021/acsami.1c22061
Project: NRF2015-IIP001-001
RCA-2019-1376
I1801E0030 
Journal: ACS Applied Materials and Interfaces 
Abstract: Field-free magnetization switching is critical towards practical, integrated spin-orbit torque (SOT)-driven magnetic random-access memory with perpendicular magnetic anisotropy. Our work proposes a technique to modulate the spin reflection and spin density of states within a heavy-metal Pt through interfacing with a dielectric MgO layer. We demonstrate tunability of the effective out-of-plane spin torque acting on the ferromagnetic Co layer, enabling current-induced SOT magnetization switching without the assistance of an external magnetic field. The influence of the MgO layer thickness on effective SOT efficiency shows saturation at 4 nm, while up to 80% of field-free magnetization switching ratio is achieved with the MgO between 5 and 8 nm. We analyze and attribute the complex interaction to spin reflection at the dielectric/heavy metal interface and spin scattering within the dielectric medium due to interfacial electric fields. Further, through substituting the dielectric with Ti or Pt, we confirm that the MgO layer is indeed responsible for the observed field-free magnetization switching mechanism.
URI: https://hdl.handle.net/10356/162308
ISSN: 1944-8244
DOI: 10.1021/acsami.1c22061
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces, copyright © 2022 American Chemical Society, after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.1c22061.
Fulltext Permission: embargo_20230228
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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