Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/162328
Title: Current degradation mechanism of tip contact metal-silicon Schottky nanogenerator
Authors: Deng, Shuo
Xu, Ran
Seh, Weibin
Sun, Jiayi
Cai, Weifan
Zou, Jianping
Zhang, Qing
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Source: Deng, S., Xu, R., Seh, W., Sun, J., Cai, W., Zou, J. & Zhang, Q. (2022). Current degradation mechanism of tip contact metal-silicon Schottky nanogenerator. Nano Energy, 94, 106888-. https://dx.doi.org/10.1016/j.nanoen.2021.106888
Project: A1983c0027
2018-T2-2-005
Journal: Nano Energy
Abstract: It has been recently found that a direct current (DC) can be generated through sliding a metal tip (or electrode) against a doped semiconductor if the two materials are of distinct work functions. However, it is also well observed that the DC current generation is degraded if the sliding is repeatedly performed over the same area. Thus, to maintain a stable DC current generation is challenging. In this paper, we present that an ultrathin silicon oxide layer is induced during sliding a platinum coated atomic force microscope tip on a clean doped silicon substrate. With increasing number of sliding over the same area, electron transfer across the tip contacted surface changes from a tribo-voltaic process to a tribo-tunneling process. Moreover, it is also observed that current degradation can be mitigated if the clean silicon substrate is annealed nitrogen. This work not only provides new understanding of electron transfer process in the dynamic Schottky junctions, but also suggests a route for further optimization of the junctions for stable current generation.
URI: https://hdl.handle.net/10356/162328
ISSN: 2211-2855
DOI: 10.1016/j.nanoen.2021.106888
Rights: © 2021 Elsevier Ltd. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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