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Title: Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density
Authors: Jung, Yongduck
Burt, Daniel
Zhang, Lin
Kim, Youngmin
Joo, Hyo-Jun
Chen, Melvina
Assali, Simone
Moutanabbir, Oussama
Tan, Chuan Seng
Nam, Donguk
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Source: Jung, Y., Burt, D., Zhang, L., Kim, Y., Joo, H., Chen, M., Assali, S., Moutanabbir, O., Tan, C. S. & Nam, D. (2022). Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density. Photonics Research, 10(6), 1332-1337.
Project: A2083c0053 
NRF-CRP19- 2017-01 
2019-T1- 002-050 [RG 148/19 (S)] 
MOE2018-T2-2-011 (S) 
T2EP50121-0001 (MOE-000180-01) 
Journal: Photonics Research 
Abstract: Despite the recent success of GeSn infrared lasers, the high lasing threshold currently limits their integration into practical applications. While structural defects in epitaxial GeSn layers have been identified as one of the major bottlenecks towards low-threshold GeSn lasers, the effect of defects on the lasing threshold has not been well studied yet. Herein, we experimentally demonstrate that the reduced defect density in a GeSn-on-insulator substrate improves the lasing threshold significantly. We first present a method of obtaining high-quality GeSn-on-insulator layers using low-temperature direct bonding and chemical–mechanical polishing. Low-temperature photoluminescence measurements reveal that the reduced defect density in GeSn-on-insulator leads to enhanced spontaneous emission and a reduced lasing threshold by ∼10 times and ∼6 times, respectively. Our result presents a new path towards pushing the performance of GeSn lasers to the limit.
ISSN: 2327-9125
DOI: 10.1364/PRJ.455443
Rights: © 2022 Chinese Laser Press. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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