Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/162422
Title: Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors
Authors: Yang, Allen Jian
Han, Kun
Huang, Ke
Ye, Chen
Wen, Wen
Zhu, Ruixue
Zhu, Rui
Xu, Jun
Yu, Ting
Gao, Peng
Xiong, Qihua
Wang, Renshaw Xiao
Keywords: Science::Physics
Engineering::Electrical and electronic engineering
Issue Date: 2022
Source: Yang, A. J., Han, K., Huang, K., Ye, C., Wen, W., Zhu, R., Zhu, R., Xu, J., Yu, T., Gao, P., Xiong, Q. & Wang, R. X. (2022). Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors. Nature Electronics, 5(4), 233-240. https://dx.doi.org/10.1038/s41928-022-00753-7
Project: MOE-T2EP50120-0006
MOE-T2EP50220-0016
MOE2018-T3-1-002 
NRF-CRP21-2018-0003
A20E5c0094
Journal: Nature Electronics
Abstract: Two-dimensional semiconductors can be used to build next-generation electronic devices with ultrascaled channel lengths. However, semiconductors need to be integrated with high-quality dielectrics—which are challenging to deposit. Here we show that single-crystal strontium titanate—a high-κ perovskite oxide—can be integrated with two-dimensional semiconductors using van der Waals forces. Strontium titanate thin films are grown on a sacrificial layer, lifted off and then transferred onto molybdenum disulfide and tungsten diselenide to make n-type and p-type transistors, respectively. The molybdenum disulfide transistors exhibit an on/off current ratio of 108 at a supply voltage of 1 V and a minimum subthreshold swing of 66 mV dec−1. We also show that the devices can be used to create low-power complementary metal–oxide–semiconductor inverter circuits.
URI: https://hdl.handle.net/10356/162422
ISSN: 2520-1131
DOI: 10.1038/s41928-022-00753-7
Rights: © 2022 The Author(s). Open Access. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons. org/licenses/by/4.0/.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
SPMS Journal Articles

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