Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/162542
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dc.contributor.authorWang, Boyanen_US
dc.date.accessioned2022-10-28T07:30:02Z-
dc.date.available2022-10-28T07:30:02Z-
dc.date.issued2022-
dc.identifier.citationWang, B. (2022). Strained graphene optoelectronic devices with unprecedented pseudo-magnetic fields. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/162542en_US
dc.identifier.urihttps://hdl.handle.net/10356/162542-
dc.description.abstractPhotonic-integrated circuit (PIC) is a research field that has been attracting many researchers’ interests owing to its great potential for enabling various disruptive technologies. In the past few decades, silicon-based PIC has been at the core of PIC development due to the maturity of industry-adopted silicon processing technologies. Since the first discovery of graphene in 2004, graphene-based PIC has been considered one of the strongest candidates to further improve the performance of silicon-based PIC for various reasons. For example, graphene has higher carrier mobility than silicon, which can allow making high-speed electronic devices. This property also enables producing very high-speed photodetectors. However, due to the zero-bandgap nature of graphene, it remains challenging to create a graphene-based light source, making the bandgap opening an important milestone for developing efficient graphene-based light sources. Recently, there have been several reports that theoretically predict the possibility of opening the energy gaps in graphene by using strain- induced pseudo-magnetic fields. In this Final Year Project (FYP) report, I investigate the research field of strained graphene particularly for harnessing pseudo-magnetic fields and pseudo-Landau levels. First, I present a review of several key papers discussing the strain- induced pseudo-magnetic fields. I then focus on discussing my research progress for monolayer graphene fabrication and the generation of strained graphene by using patterned substrates. Lastly, I discuss the characterization results of the fabricated devices using Raman spectroscopy.en_US
dc.language.isoenen_US
dc.publisherNanyang Technological Universityen_US
dc.relationMSE/21/116en_US
dc.subjectEngineering::Materialsen_US
dc.titleStrained graphene optoelectronic devices with unprecedented pseudo-magnetic fieldsen_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorNam Donguken_US
dc.contributor.supervisorTeo Hang Tong Edwinen_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.description.degreeBachelor of Engineering (Materials Engineering)en_US
dc.contributor.supervisoremailHTTEO@ntu.edu.sg, dnam@ntu.edu.sgen_US
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Appears in Collections:MSE Student Reports (FYP/IA/PA/PI)
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