Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/162543
Title: Avoiding abnormal grain growth when annealing selective laser melted pure titanium by promoting nucleation
Authors: Chen, Kewei
Huang, De Jun
Li, Hua
Jia, Ning
Chong, Warren
Keywords: Engineering::Mechanical engineering
Engineering::Materials
Issue Date: 2022
Source: Chen, K., Huang, D. J., Li, H., Jia, N. & Chong, W. (2022). Avoiding abnormal grain growth when annealing selective laser melted pure titanium by promoting nucleation. Scripta Materialia, 209, 114377-. https://dx.doi.org/10.1016/j.scriptamat.2021.114377
Journal: Scripta Materialia
Abstract: In this study, the recrystallization process of selective laser melted (SLM) commercially pure titanium (CP-Ti) was followed by a quasi-in-situ electron backscatter diffraction (EBSD) method at 800 °C and 700 °C. Abnormal grain growth (AGG) initially emerges at the beginning of annealing at 800 °C and is primarily caused by strain-induced boundary migration (SIBM). However, at the beginning of annealing at 700 °C, many small equiaxed grains are formed due to more recrystallization nucleation, followed by the formation of AGG resulting from the secondary recrystallization. Based on these findings, appropriate control of the annealing time at 700 °C can mitigate AGG to obtain fine equiaxed grains with weak texture to enhance the tensile properties of SLM CP-Ti.
URI: https://hdl.handle.net/10356/162543
ISSN: 1359-6462
DOI: 10.1016/j.scriptamat.2021.114377
Rights: © 2021 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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