Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/162672
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dc.contributor.authorChee, Mun Yinen_US
dc.contributor.authorDananjaya, Putu Andhitaen_US
dc.contributor.authorLim, Gerard Josephen_US
dc.contributor.authorDu, Yuanminen_US
dc.contributor.authorLew, Wen Siangen_US
dc.date.accessioned2022-11-03T02:38:51Z-
dc.date.available2022-11-03T02:38:51Z-
dc.date.issued2022-
dc.identifier.citationChee, M. Y., Dananjaya, P. A., Lim, G. J., Du, Y. & Lew, W. S. (2022). Frequency-dependent synapse weight tuning in 1S1R with short-term plasticity TiOx-based exponential selector. ACS Applied Materials & Interfaces, 14(31), 35959-35968. https://dx.doi.org/10.1021/acsami.2c11016en_US
dc.identifier.issn1944-8244en_US
dc.identifier.urihttps://hdl.handle.net/10356/162672-
dc.description.abstractShort-term plasticity (STP) is an important synaptic characteristic in the hardware implementation of artificial neural networks (ANN), as it enables the temporal information processing (TIP) capability. However, the STP feature is rather challenging to reproduce from a single non-volatile resistive random-access memory (RRAM) element, as it requires a certain degree of volatility. In this work, a Pt/TiOx/Pt exponential selector is introduced not only to suppress the sneak current, but also to enable the TIP feature in a one selector-one RRAM (1S1R) synaptic device. Our measurements reveal that the exponential selector exhibits the STP characteristic, while a Pt/HfOx/Ti RRAM enables the long-term memory capability of the synapse. Thereafter, we experimentally demonstrated pulse frequency-dependent multilevel switching in the 1S1R device, exhibiting the TIP capability of the developed 1S1R synapse. The observed STP of the selector is strongly influenced by the bottom metal-oxide interface, in which Ar plasma treatment on the bottom Pt electrode show the annihilation of the STP feature in the selector. A mechanism is thus proposed to explain the observed STP, using the local electric field enhancement induced at the metal-oxide interface coupled with the drift-diffusion model of mobile O2- and Ti3+ ions. This work therefore provides a reliable means of producing the STP feature in a 1S1R device, which demonstrates the TIP capability sought after in hardware-based ANN.en_US
dc.description.sponsorshipAgency for Science, Technology and Research (A*STAR)en_US
dc.language.isoenen_US
dc.relationI1801E0030en_US
dc.relation.ispartofACS Applied Materials & Interfacesen_US
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © 2022 American Chemical Society, after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.2c11016.en_US
dc.subjectScience::Physicsen_US
dc.titleFrequency-dependent synapse weight tuning in 1S1R with short-term plasticity TiOx-based exponential selectoren_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen_US
dc.identifier.doi10.1021/acsami.2c11016-
dc.description.versionSubmitted/Accepted versionen_US
dc.identifier.issue31en_US
dc.identifier.volume14en_US
dc.identifier.spage35959en_US
dc.identifier.epage35968en_US
dc.subject.keywordsShort-Term Plasticityen_US
dc.subject.keywordsTiOx-Based Selectoren_US
dc.subject.keywordsResistive Random-Access Memoryen_US
dc.subject.keywordsOne Selector-One RRAMen_US
dc.description.acknowledgementThis work was supported by a RIE2020 ASTAR AME IAF-ICP Grant (No.I1801E0030).en_US
item.grantfulltextembargo_20230817-
item.fulltextWith Fulltext-
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