Preparation and characterization of 2D-based magnetic devices

Abstract

Current computational devices are constructed with the CMOS technology based on the Von Neumann architecture, with separate memory and processing units. Scaling down of devices eventually leads to a bottleneck of device performance. Hence, a transition towards modern spintronic devices with human brain-like architecture with multilevel resistance states is expected. This is achievable by magnetic domain wall-based devices, in particular, magnetic tunnel junctions (MTJs).

Fe3GeTe2 (FGT) is a two-dimensional (2D) ferromagnetic material, which has been proven to have properties that are beneficial for the realisation of a 2D-MTJ. This project aims to prepare a 2D FGT flake by mechanical exfoliation and dry transfer techniques. Mechanical exfoliation was done inside an air-free glovebox, while the dry transfer procedure was done both inside and outside the glovebox. Scanning Electron Microscopy (SEM) observations were done to estimate its electron transparency. Energy Dispersive X-ray Spectroscopy (EDX) measurements were done to verify its chemical formula. Lorentz mode Transmission Electron Microscopy (TEM) experiments were performed to image its magnetic domain structure and study the effects when subjected to increasing temperature and external magnetic fields.