Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/162711
Title: Dative epitaxy of commensurate monocrystalline covalent van der Waals Moiré supercrystal
Authors: Bian, Mengying
Zhu, Liang
Wang, Xiao
Choi, Junho
Chopdekar, Rajesh V.
Wei, Sichen
Wu, Lishu
Huai, Chang
Marga, Austin
Yang, Qishuo
Li, Yuguang C.
Yao, Fei
Yu, Ting
Crooker, Scott A.
Cheng, M. Xuemei
Sabirianov, Renat F.
Zhang, Shengbai
Lin, Junhao
Hou, Yanglong
Zeng, Hao
Keywords: Science::Physics
Issue Date: 2022
Source: Bian, M., Zhu, L., Wang, X., Choi, J., Chopdekar, R. V., Wei, S., Wu, L., Huai, C., Marga, A., Yang, Q., Li, Y. C., Yao, F., Yu, T., Crooker, S. A., Cheng, M. X., Sabirianov, R. F., Zhang, S., Lin, J., Hou, Y. & Zeng, H. (2022). Dative epitaxy of commensurate monocrystalline covalent van der Waals Moiré supercrystal. Advanced Materials, 34(17), e2200117-. https://dx.doi.org/10.1002/adma.202200117
Journal: Advanced Materials
Abstract: Realizing van der Waals (vdW) epitaxy in the 1980s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW interactions, there is little control over film qualities by the substrate. Typically, discrete domains with a spread of misorientation angles are formed, limiting the applicability of vdW epitaxy. Here, the epitaxial growth of monocrystalline, covalent Cr5 Te8 2D crystals on monolayer vdW WSe2 by chemical vapor deposition is reported, driven by interfacial dative bond formation. The lattice of Cr5 Te8 , with a lateral dimension of a few tens of micrometers, is fully commensurate with that of WSe2 via 3 × 3 (Cr5 Te8 )/7 × 7 (WSe2 ) supercell matching, forming a single-crystalline moiré superlattice. This work establishes a conceptually distinct paradigm of thin-film epitaxy, termed "dative epitaxy", which takes full advantage of covalent epitaxy with chemical bonding for fixing the atomic registry and crystal orientation, while circumventing its stringent lattice matching and processing compatibility requirements; conversely, it ensures the full flexibility of vdW epitaxy, while avoiding its poor orientation control. Cr5 Te8 2D crystals grown by dative epitaxy exhibit square magnetic hysteresis, suggesting minimized interfacial defects that can serve as pinning sites.
URI: https://hdl.handle.net/10356/162711
ISSN: 0935-9648
DOI: 10.1002/adma.202200117
Rights: © 2022 Wiley-VCH GmbH. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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