Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/162895
Title: Recent developments in chemical vapor deposition of 2D magnetic transition metal chalcogenides
Authors: Tang, Bijun
Hu, Dianyi
Zhao, Xiaoxu
Wang, Xiaowei
Liu, Zheng
Keywords: Engineering::Materials
Issue Date: 2022
Source: Tang, B., Hu, D., Zhao, X., Wang, X. & Liu, Z. (2022). Recent developments in chemical vapor deposition of 2D magnetic transition metal chalcogenides. ACS Applied Electronic Materials, 4(7), 3303-3324. https://dx.doi.org/10.1021/acsaelm.2c00425
Project: NRF-CRP22-2019-0007
NRF-CRP21-2018-0007
NRF-CRP22-2019-0004
MOE2018-T3-1-002
RG161/19
Journal: ACS Applied Electronic Materials
Abstract: In recent years, two-dimensional (2D) magnetic transition metal chalcogenides (TMCs) have attracted tremendous research interests thanks to their intriguing properties that are essential in developing future electronic and spintronic devices in this modernizing era. This review aims to introduce recent developments in the preparation of 2D magnetic TMCs, especially chromium and iron-based chalcogenides, their structures, as well as the related intriguing magnetic phenomena. First, the common crystal structures of magnetic TMCs including both layered and nonlayered structures are introduced. Various chemical vapor deposition strategies for synthesizing 2D magnetic TMCs are then introduced with emphasis on the key synthesis parameters. Moreover, the intriguing physical properties associated with 2D TMCs such as magnetic anisotropy, thickness, and phase-dependent magnetic response as well as stability are summarized. Last but not least, challenges and future research directions are briefly discussed in light of recent advances in the field.
URI: https://hdl.handle.net/10356/162895
ISSN: 2637-6113
DOI: 10.1021/acsaelm.2c00425
Rights: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © 2022 American Chemical Society, after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaelm.2c00425.
Fulltext Permission: embargo_20230803
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
MSE Journal Articles

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