Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/163027
Title: Prediction of overshoot and crosstalk of low-voltage GaN HEMT using analytical model
Authors: Wu, Yingzhe
Yin, Shan
Dong, Minghai
Jin, Shoudong
Li, Hui
Cheng, Yuhua
See, Kye Yak
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Source: Wu, Y., Yin, S., Dong, M., Jin, S., Li, H., Cheng, Y. & See, K. Y. (2022). Prediction of overshoot and crosstalk of low-voltage GaN HEMT using analytical model. IET Power Electronics, 15(13), 1295-1321. https://dx.doi.org/10.1049/pel2.12305
Journal: IET Power Electronics
Abstract: Ultra-fast switching speed and low switching loss of the gallium nitride high electron mobility transistors enable the realisation of high power density converter with excellent conversion efficiency. However, the rapid switching transition leads to significant overshoot and crosstalk issues that can degrade the performance of the devices. To facilitate the evaluation of these effects on low-voltage gallium nitride devices, this paper develops an analytical model to predict overshoot and crosstalk during switching transitions accurately and efficiently. The model is constructed based on the detailed circuit deduction of various stages of the device's switching process. It also considers the voltage-dependent junction capacitances as well as the forward and the reverse transconductances. The simulated results obtained from the model are validated experimentally. With the model, the impacts of parasitic elements, especially the power loop inductance, on voltage/current overshoots and spurious voltage due to crosstalk can be easily evaluated, which provides valuable design guidelines for power conversion applications using low-voltage gallium nitride high electron mobility transistor.
URI: https://hdl.handle.net/10356/163027
ISSN: 1755-4535
DOI: 10.1049/pel2.12305
Rights: © 2022 The Authors. IET Power Electronics published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology. This is an open access article under the terms of the Creative Commons Attribution-NonCommercial-NoDerivs License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non-commercial and no modifications or adaptations are made.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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