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Title: Strong piezoelectricity in 3R-MoS₂ flakes
Authors: Hallil, Hamida
Cai, Weifan
Zhang, Kang
Yu, Peng
Liu, Sheng
Xu, Ran
Zhu, Chao
Xiong, Qihua
Liu, Zheng
Zhang, Qing
Keywords: Engineering::Materials
Issue Date: 2022
Source: Hallil, H., Cai, W., Zhang, K., Yu, P., Liu, S., Xu, R., Zhu, C., Xiong, Q., Liu, Z. & Zhang, Q. (2022). Strong piezoelectricity in 3R-MoS₂ flakes. Advanced Electronic Materials, 8(7), 2101131-.
Project: MOE 2017-T2-2-136 
Journal: Advanced Electronic Materials
Abstract: Distinct from conventional 2H-MoS2, recently synthesized 3R-MoS2 exhibits a noncentrosymmetric atomic structure of the trigonal “building blocks” and, thus, remarkable piezoelectric characteristics of ultrathin 3R-MoS2 flakes are predicated theoretically. This paper reveals, for the first time, very high piezoelectricity in 3R-MoS2 flakes experimentally. Through applying mechanical stress to a 48 nm 3R-MoS2 flake, a high output power density of 65 mW m-2 is obtained and is at least one order larger than those from the corresponding monolayer MoS2 flake. With out-of-plane lateral piezoresponse force microscopy technique, the two piezoelectric coefficients d33 and d13 are analyzed to be ≈0.9 and ≈1.6 pm V-1, respectively. These piezoelectric coefficients are not apparently dependent on the flake thickness. The findings suggest that 3R-MoS2 is of excellent piezoelectric properties and it can be an excellent material for novel piezoelectric devices.
ISSN: 2199-160X
DOI: 10.1002/aelm.202101131
Schools: School of Electrical and Electronic Engineering 
School of Physical and Mathematical Sciences 
School of Materials Science and Engineering 
Research Centres: CNRS International NTU THALES Research Alliances 
Research Techno Plaza 
Centre for Micro-/Nano-electronics (NOVITAS) 
Rights: © 2022 Wiley-VCH GmbH. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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