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dc.contributor.authorLi, Pingen_US
dc.contributor.authorChaturvedi, Apoorvaen_US
dc.contributor.authorZhou, Hailinen_US
dc.contributor.authorZhang, Gaojunen_US
dc.contributor.authorLi, Qiankunen_US
dc.contributor.authorXue, Jinshuoen_US
dc.contributor.authorZhou, Ziwenen_US
dc.contributor.authorWang, Shunen_US
dc.contributor.authorZhou, Kunen_US
dc.contributor.authorWeng, Yuyanen_US
dc.contributor.authorZheng, Fengangen_US
dc.contributor.authorShi, Zhenwuen_US
dc.contributor.authorTeo, Edwin Hang Tongen_US
dc.contributor.authorFang, Liangen_US
dc.contributor.authorYou, Luen_US
dc.identifier.citationLi, P., Chaturvedi, A., Zhou, H., Zhang, G., Li, Q., Xue, J., Zhou, Z., Wang, S., Zhou, K., Weng, Y., Zheng, F., Shi, Z., Teo, E. H. T., Fang, L. & You, L. (2022). Electrostatic coupling in MoS₂/CuInP₂S₆ Ferroelectric vdW heterostructures. Advanced Functional Materials, 32(29), 2201359-.
dc.description.abstractFerroelectric van der Waals (vdW) heterostructure have recently emerged as a low-power, versatile device paradigm because it combines the great diversity of the 2D materials and the memory nature of ferroelectrics. The non-volatile field effect generated by the polarization bound charge is the pivotal factor for the device's performance. Unfortunately, microscopic studies on the interplay between polarization switching and electrostatic coupling at the heterojunction remain largely overlooked. Herein, the authors investigate the electrostatic coupling phenomena of vdW heterostructures consisting of semiconducting MoS2 and ferroelectric CuInP2S6. Significant charge injection accompanying the polarization reversal appears to be the governing field effect that modulates the electronic and photoluminescent properties of MoS2, as revealed by correlated ferroelectric domain, surface potential, and photoluminescence microscopies. Conversely, the photoactivity of the MoS2 also affects the polarization stability of CuInP2S6. This work provides direct microscopic insight into the mutual electrostatic interactions in vdW ferroelectric-semiconductor heterojunctions, which has broad implications for ferroelectric field-effect applications.en_US
dc.relation.ispartofAdvanced Functional Materialsen_US
dc.rights© 2022 Wiley-VCH GmbH. All rights reserved.en_US
dc.titleElectrostatic coupling in MoS₂/CuInP₂S₆ Ferroelectric vdW heterostructuresen_US
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.subject.keywordsFerroelectric Field-Effecten_US
dc.description.acknowledgementThis work was supported by the National Natural Science Foundation of China (No. 12074278), the Natural Science Foundation of the Jiangsu Higher Education Institution of China (20KJA140001), and the Priority Academic Program Development (PAPD) of Jiangsu Higher Education Institutions. L.Y. acknowledges the startup funds from Soochow University and Jiangsu Specially-Appointed Professors Program.en_US
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