Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/163317
Title: Design an InAsN/InP quantum well laser diode working at 4 um
Authors: Yang, Yifan
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Publisher: Nanyang Technological University
Source: Yang, Y. (2022). Design an InAsN/InP quantum well laser diode working at 4 um. Master's thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/163317
Abstract: There are many applications including research, biomedical surgery, molecular spectroscopy, telecommunications, environmental protection, military and semiconductor industries for semiconductor lasers which is emitting light about 2-5 um known as the MIR range. InAsN has two essential characteristics, the one is that the band gap can reduce because of the huge bowing parameters bring by the different electronegativities and atomic sizes of As and N atoms the other is that the lattice mismatch will reduce when it is grown on InP substrate. These two characteristics can broaden InAsN quantum well laser diode’s wavelength range and make it to be a potential material for the application of MIR. In addition, the quality of the InP substrate is better than that of GaSb substrate. The sophisticated processing and growing technology of InP-related alloys also benefit laser diodes with InAsN quantum well structures. In this dissertation, an InAsN/InP quantum well laser diode is designed based on the k•p 10-band model by the effective mass method. The proper component of InAsN and well width that can fabricate a 4 um laser is studied. On this basis, 4 cases are picked to investigate their effect on the optical gain and the case whose N composition is 7% and 6.17nm has the best performance.
URI: https://hdl.handle.net/10356/163317
Schools: School of Electrical and Electronic Engineering 
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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