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Title: Enhanced near-room-temperature thermoelectric performance in GeTe
Authors: Tan, Xian Yi
Dong, Jinfeng
Jia, Ning
Zhang, Hong-Xia
Ji, Rong
Suwardi, Ady
Li, Zhi-Liang
Zhu, Qiang
Xu, Jian-Wei
Yan, Qingyu
Keywords: Engineering::Materials::Energy materials
Issue Date: 2022
Source: Tan, X. Y., Dong, J., Jia, N., Zhang, H., Ji, R., Suwardi, A., Li, Z., Zhu, Q., Xu, J. & Yan, Q. (2022). Enhanced near-room-temperature thermoelectric performance in GeTe. Rare Metals, 41(9), 3027-3034.
Project: 2018-T2-1-010 
Journal: Rare Metals 
Abstract: GeTe is an excellent mid-temperature thermoelectric material with high dimensionless figure of merit (ZT) values at temperatures over 600 K. Its near-room-temperature performance is less studied due to the intrinsic high carrier concentration. Here, we successfully enhance the Seebeck coefficient of GeTe from ~ 30 to 220 μV·K−1 at 300 K, which is achieved by AgInSe2 alloying and Bi doping. It is demonstrated that Bi doping helps to optimize the Seebeck coefficient without deteriorating the intrinsic electrical transport properties of the matrix. A high room-temperature power factor (PF) of ~ 11 μW·cm−1·K−2 is achieved for a wide range of Bi-doped samples. The simultaneously introduced abundant point defects cause mass and strain fluctuations, which decrease the lattice thermal conductivity (κL) to a low value of 0.6 W·m−1·K−1 at 300 K. Due to the synergetic effects of Bi doping in AgInSe2-alloyed GeTe, a high room-temperature ZT value of 0.46 is obtained together with a high ZT value of 1.1 at 523 K.
ISSN: 1001-0521
DOI: 10.1007/s12598-022-02036-8
Schools: School of Materials Science and Engineering 
Organisations: Institute of Materials Research and Engineering, A*STAR 
Rights: © 2022 Youke Publishing Co., Ltd. All rights reserved. This paper was published by Springer in Rare Metals and is made available with permission of Youke Publishing Co., Ltd.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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