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Title: Properties, synthesis, and device applications of 2D layered InSe
Authors: Dai, Mingjin
Gao, Caifang
Nie, Qianfan
Wang, Qi Jie
Lin, Yen-Fu
Chu, Junhao
Li, Wenwu
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Source: Dai, M., Gao, C., Nie, Q., Wang, Q. J., Lin, Y., Chu, J. & Li, W. (2022). Properties, synthesis, and device applications of 2D layered InSe. Advanced Materials Technologies, 2200321-.
Journal: Advanced Materials Technologies
Abstract: Van der Waals layered indium selenide (InSe) is an emerging star of the 2D semiconducting materials because of its excellent fundamental properties, such as ultrahigh carrier mobility, layer-tunable bandgap, large elastic deformability, and rich polytypes. In addition, 2D layered indium selenide has demonstrated outstanding device performance including photodetector, field-effect transistor, memory and synapse, mechanical and gas sensor, which has offered a new chance to next-generation electrical and optoelectronic devices. This review presents a comprehensive summary of recent progress in 2D layered indium selenide. The novel fundamental properties and synthetic methods are summarized. Also, the indium selenide-based state-of-the-art electronic/optoelectronic devices, such as a functional field-effect transistor, photodetector, and mechanical and gas sensors are systematically summarized. The techniques to enhance the performances of devices are also discussed. Finally, a brief discussion on the challenges and future opportunities as a guideline for this field is provided.
ISSN: 2365-709X
DOI: 10.1002/admt.202200321
Schools: School of Electrical and Electronic Engineering 
Rights: © 2022 Wiley-VCH GmbH. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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