Please use this identifier to cite or link to this item:
Title: CMOS-compatible Ti/TiN/Al refractory ohmic contact for GaAs heterojunction bipolar transistors grown on Ge/Si substrate
Authors: Wang, Yue
Loke, Wan Khai
Gao, Yu
Lee, Kwang Hong
Lee, Kenneth Eng Kian
Gan, Chee Lip
Tan, Chuan Seng
Fitzgerald, Eugene A.
Yoon, Soon Fatt
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2021
Source: Wang, Y., Loke, W. K., Gao, Y., Lee, K. H., Lee, K. E. K., Gan, C. L., Tan, C. S., Fitzgerald, E. A. & Yoon, S. F. (2021). CMOS-compatible Ti/TiN/Al refractory ohmic contact for GaAs heterojunction bipolar transistors grown on Ge/Si substrate. IEEE Transactions On Electron Devices, 68(12), 6065-6068.
Journal: IEEE Transactions on Electron Devices
Abstract: In this article, we demonstrate the Ti/TiN/Al (15/50/50 nm) ohmic contact on InGaP/GaAs heterojunction bipolar transistors (HBTs) epitaxially grown on 200-mm Si substrate. We study the rapid thermal annealing (RTA) effect of the metal stack on both n-type InGaAs and p-type GaAs. The dc characteristics of the HBT devices fabricated using the Ti/TiN/Al metal contacts have been analyzed. Contact resistances (R-c)<0.1 Omega. mm for n-InGaAs and 0.8 Omega. mm for p-GaAs can be achieved. A dc current gain of 45 with a collector-base breakdown voltage (BVcbo) of 15.65 V is achieved. The ideality factor of the emitter-base current (n(b)) and base-collector current (n(c)) is 1.03 and 1.44, respectively, after RTA at 450 degrees C. The dc characteristics remain stable upon prolonged annealing at 450 degrees C for 45 min. This high thermal budget non-gold ohmic contact is suitable for Si-CMOS integration and enables the potential for hybrid III-V CMOS technology for 5G and mm-wave applications.
ISSN: 0018-9383
DOI: 10.1109/TED.2021.3119557
Schools: School of Materials Science and Engineering 
School of Electrical and Electronic Engineering 
Rights: © 2021 IEEE. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles
MSE Journal Articles

Citations 50

Updated on Apr 12, 2024

Web of ScienceTM
Citations 50

Updated on Oct 24, 2023

Page view(s)

Updated on Apr 14, 2024

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.