Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/163772
Title: CMOS-compatible Ti/TiN/Al refractory ohmic contact for GaAs heterojunction bipolar transistors grown on Ge/Si substrate
Authors: Wang, Yue
Loke, Wan Khai
Gao, Yu
Lee, Kwang Hong
Lee, Kenneth Eng Kian
Gan, Chee Lip
Tan, Chuan Seng
Fitzgerald, Eugene A.
Yoon, Soon Fatt
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2021
Source: Wang, Y., Loke, W. K., Gao, Y., Lee, K. H., Lee, K. E. K., Gan, C. L., Tan, C. S., Fitzgerald, E. A. & Yoon, S. F. (2021). CMOS-compatible Ti/TiN/Al refractory ohmic contact for GaAs heterojunction bipolar transistors grown on Ge/Si substrate. IEEE Transactions On Electron Devices, 68(12), 6065-6068. https://dx.doi.org/10.1109/TED.2021.3119557
Journal: IEEE Transactions on Electron Devices
Abstract: In this article, we demonstrate the Ti/TiN/Al (15/50/50 nm) ohmic contact on InGaP/GaAs heterojunction bipolar transistors (HBTs) epitaxially grown on 200-mm Si substrate. We study the rapid thermal annealing (RTA) effect of the metal stack on both n-type InGaAs and p-type GaAs. The dc characteristics of the HBT devices fabricated using the Ti/TiN/Al metal contacts have been analyzed. Contact resistances (R-c)<0.1 Omega. mm for n-InGaAs and 0.8 Omega. mm for p-GaAs can be achieved. A dc current gain of 45 with a collector-base breakdown voltage (BVcbo) of 15.65 V is achieved. The ideality factor of the emitter-base current (n(b)) and base-collector current (n(c)) is 1.03 and 1.44, respectively, after RTA at 450 degrees C. The dc characteristics remain stable upon prolonged annealing at 450 degrees C for 45 min. This high thermal budget non-gold ohmic contact is suitable for Si-CMOS integration and enables the potential for hybrid III-V CMOS technology for 5G and mm-wave applications.
URI: https://hdl.handle.net/10356/163772
ISSN: 0018-9383
DOI: 10.1109/TED.2021.3119557
Schools: School of Materials Science and Engineering 
School of Electrical and Electronic Engineering 
Rights: © 2021 IEEE. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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