Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/164068
Title: A CMOS balun with common ground and artificial dielectric compensations applied in a wideband RF front-end
Authors: Yang, Geliang
Tang, Kai
Wang, Zhigong
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Source: Yang, G., Tang, K. & Wang, Z. (2022). A CMOS balun with common ground and artificial dielectric compensations applied in a wideband RF front-end. Microelectronics Journal, 125, 105465-. https://dx.doi.org/10.1016/j.mejo.2022.105465
Journal: Microelectronics Journal
Abstract: This paper presents a compact on-chip balun with a turn ratio of 1:2, and its application for sub-6 GHz wideband front-end. The common ground between the primary and secondary windings is designed by utilizing a short transmission line (T-line) to eliminate the imbalance. To further mitigate the imbalance, float metal conductors are used as a part of primary winding for artificial dielectric compensation. A 2.0-to-3.7 GHz wideband RF front-end is also designed by using the proposed CMOS balun. The balun and RF front-end are fabricated by using a standard 0.13-μm CMOS technology. The bandwidth of the proposed balun for |S11|<-10 dB is 2.2–5.1 GHz with fractional bandwidth up to 79.5%. In the operational bandwidth, the maximum amplitude and phase imbalance is 1.5 dB and 2°, respectively. The measured insertion loss is 4.8–5.6 dB (including 3 dB splitting loss) within the frequency range from 2.2 to 5.1 GHz.
URI: https://hdl.handle.net/10356/164068
ISSN: 0026-2692
DOI: 10.1016/j.mejo.2022.105465
Rights: © 2022 Elsevier Ltd. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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