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Title: Phononic real Chern insulator with protected corner modes in graphynes
Authors: Zhu, Jiaojiao
Wu, Weikang
Zhao, Jianzhou
Chen, Cong
Wang, Qianqian
Sheng, Xianlei
Zhang, Lifa
Zhao, Yuxin
Yang, Shengyuan A.
Keywords: Science::Physics
Issue Date: 2022
Source: Zhu, J., Wu, W., Zhao, J., Chen, C., Wang, Q., Sheng, X., Zhang, L., Zhao, Y. & Yang, S. A. (2022). Phononic real Chern insulator with protected corner modes in graphynes. Physical Review B, 105(8), 085123-1-085123-7.
Project: MOE2019-T2-1-001 
NRF-CRP22- 2019-0004 
Journal: Physical Review B
Abstract: Higher-order topological insulators have attracted great research interest recently. Different from conventional topological insulators, higher-order topological insulators do not necessarily require spin-orbit coupling, which makes it possible to realize them in spinless systems. Here, we study phonons in 2D graphyne family materials. By using first-principle calculations and topology/symmetry analysis, we find that phonons in both graphdiyne and $\gamma$-graphyne exhibit a second-order topology, which belongs to the specific case known as real Chern insulator. We identify the nontrivial phononic band gaps, which are characterized by nontrivial real Chern numbers enabled by the spacetime inversion symmetry. The protected phonon corner modes are verified by the calculation on a finite-size nanodisk. Our study extends the scope of higher-order topology to phonons in real materials. The spatially localized phonon modes could be useful for novel phononic applications.
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.105.085123
Schools: School of Physical and Mathematical Sciences 
Rights: © 2022 American Physical Society. All rights reserved. This paper was published in Physical Review B and is made available with permission of American Physical Society.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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