Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/164256
Title: Efficient avalanche photodiodes with a WSe₂/MoS₂ heterostructure via two-photon absorption
Authors: Son, Bongkwon
Wang, Yadong
Luo, Manlin
Lu, Kunze
Kim, Youngmin
Joo, Hyo-Jun
Yi, Yu
Wang, Chongwu
Wang, Qi Jie
Chae, Sang Hoon
Nam, Donguk
Keywords: Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2022
Source: Son, B., Wang, Y., Luo, M., Lu, K., Kim, Y., Joo, H., Yi, Y., Wang, C., Wang, Q. J., Chae, S. H. & Nam, D. (2022). Efficient avalanche photodiodes with a WSe₂/MoS₂ heterostructure via two-photon absorption. Nano Letters, 22(23), 9516-9522. https://dx.doi.org/10.1021/acs.nanolett.2c03629
Project: RG 115/21
MOE2018-T2-2-011 (S) 
NRF-CRP19- 2017-01 
NRF2018-NRF-ANR009 TIGER
A2083c0053
Journal: Nano Letters
Abstract: Two-dimensional (2D) materials-based photodetectors in the infrared range hold the key to enabling a wide range of optoelectronics applications including infrared imaging and optical communications. While there exist 2D materials with a narrow bandgap sensitive to infrared photons, a two-photon absorption (TPA) process can also enable infrared photodetection in well-established 2D materials with large bandgaps such as WSe2 and MoS2. However, most of the TPA photodetectors suffer from low responsivity, preventing this method from being widely adopted for infrared photodetection. Herein, we experimentally demonstrate 2D materials-based TPA avalanche photodiodes achieving an ultrahigh responsivity. The WSe2/MoS2 heterostructure absorbs infrared photons with an energy smaller than the material bandgaps via a low-efficiency TPA process. The significant avalanche effect with a gain of ∼1300 improves the responsivity, resulting in the record-high responsivity of 88 μA/W. We believe that this work paves the way toward building practical and high-efficiency 2D materials-based infrared photodetectors.
URI: https://hdl.handle.net/10356/164256
ISSN: 1530-6984
DOI: 10.1021/acs.nanolett.2c03629
Schools: School of Electrical and Electronic Engineering 
School of Materials Science and Engineering 
Rights: © 2022 American Chemical Society. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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