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Title: Thermal shock resistance enhancement by improved interfacial bonding for carbon/aluminium composites
Authors: Wei, Wenfu
Huang, Zhanglin
Yin, Guofeng
Yang, Zefeng
Li, Xiaobo
Zuo, Haozi
Deng, Qin
Huang, Guizao
Ren, Junwen
Liao, Qianhua
Yang, Yan
Wu, Guangning
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Source: Wei, W., Huang, Z., Yin, G., Yang, Z., Li, X., Zuo, H., Deng, Q., Huang, G., Ren, J., Liao, Q., Yang, Y. & Wu, G. (2022). Thermal shock resistance enhancement by improved interfacial bonding for carbon/aluminium composites. High Voltage, 7(5), 960-967.
Journal: High Voltage
Abstract: Carbon/aluminium (C/Al) composites have the advantages of low density and high electrical conductivity, which have potential applications in aerospace, rail transportation and other fields. However, the unstable bonding of the C/Al interface and significant thermal expansion differences have resulted in risks of the composites' failure once suffering from severe thermal shock. In this work, the C/Al composites were prepared by the pressure impregnation method, and silicon (Si) was added to overcome the problems of C/Al non-wettability and thermal expansion differences. The effects of mass fractions of doped silicon on the mechanical properties, electrical conductivity and thermal shock resistance of C/Al composites were also examined. Results show that the formed SiC interlayer has effectively enhanced the interfacial bonding and reduced the differences in the thermal expansion coefficient of each component. As a result, the thermal shock resistance of the composites has been remarkably improved, and the flexural strength could remain 90% of the original level after the thermal shock test, compared with 50% of that without Si doping.
ISSN: 2397-7264
DOI: 10.1049/hve2.12190
Schools: School of Electrical and Electronic Engineering 
Rights: © 2022 The Authors. High Voltage published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology and China Electric Power Research Institute. This is an open access article under the terms of the Creative Commons Attribution-NonCommercial‐NoDerivs License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non‐commercial and no modifications or adaptations are made.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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