Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/164348
Title: Boron-doped polysilicon using spin-on doping for high-efficiency both-side passivating contact silicon solar cells
Authors: Park, Hyunjung
Kim, Jinsol
Choi, Dongjin
Lee, Sang-Won
Kang, Dongkyun
Lee, Hae-Seok
Kim, Donghwan
Kim, Munho
Kang, Yoonmook
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Source: Park, H., Kim, J., Choi, D., Lee, S., Kang, D., Lee, H., Kim, D., Kim, M. & Kang, Y. (2022). Boron-doped polysilicon using spin-on doping for high-efficiency both-side passivating contact silicon solar cells. Progress in Photovoltaics: Research and Applications. https://dx.doi.org/10.1002/pip.3648
Journal: Progress in Photovoltaics: Research and Applications
Abstract: This study focuses on boron-doped p+polysilicon (poly-Si) passivating contacts using spin-on doping (SOD). Experimental conditions, including annealing conditions, SOD concentration, and poly-Si thickness, were controlled to improve passivation. Based on the analysis results, the passivation quality mainly changes with indiffusion and doping concentration, causing Auger recombination and field effects. Meanwhile, grain size also influences the passivation quality but showed marginal characteristics. Through further optimization using an etch back and diffusion barrier, the efficiency of the flat reference solar cell was improved to 17.5% with an open-circuit voltage of 695 mV using a p+ poly-Si contact emitter, the highest reported efficiency using SOD on saw-damage-etched surfaces. This study includes a detailed analysis of SOD p+ poly-Si and shows promising results with potential for application in tandem devices. Furthermore, the cell efficiency is expected to increase by controlling the doping profile and application of textured surfaces, selective emitters, and forming gas annealing (FGA).
URI: https://hdl.handle.net/10356/164348
ISSN: 1062-7995
DOI: 10.1002/pip.3648
Rights: © 2022 John Wiley & Sons Ltd. All rights reserved. This is the peer reviewed version of the following article: Park, H., Kim, J., Choi, D., Lee, S., Kang, D., Lee, H., Kim, D., Kim, M. & Kang, Y. (2022). Boron-doped polysilicon using spin-on doping for high-efficiency both-side passivating contact silicon solar cells. Progress in Photovoltaics: Research and Applications., which has been published in final form at https://doi.org/10.1002/pip.3648. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
Fulltext Permission: embargo_20231123
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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