Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/164351
Title: Single-crystalline Ge₁₋ₓSnₓ/Si p–n heterojunction photodiodes with Sn compositions up to 10%
Authors: An, Shu
Huang, Yi-Chiau
Wu, Chen-Ying
Huang, Po-Rei
Chang, Guo-En
Lai, Junyu
Seo, Jung-Hun
Kim, Munho
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Source: An, S., Huang, Y., Wu, C., Huang, P., Chang, G., Lai, J., Seo, J. & Kim, M. (2022). Single-crystalline Ge₁₋ₓSnₓ/Si p–n heterojunction photodiodes with Sn compositions up to 10%. Advanced Materials Technologies. https://dx.doi.org/10.1002/admt.202201136
Project: A2084c0066
T2EP50120-0001
2020-T1-002-020 (RG136/20)
Journal: Advanced Materials Technologies
Abstract: GeSn/Si heterojunction photodiodes are attractive because they can extend light detection wavelength range. However, the development of such photodiodes via epitaxial growth faces great challenges due to unavoidable issues such as lattice and thermal mismatches between Si and GeSn. Here, print Si nanomembranes are transferred on GeSn/Ge/Si substrates to form the GeSn/Si heterojunction photodiodes. The p-Ge0.977Sn0.023/n-Si heterojunction photodiodes exhibit a good rectifying behavior with a low dark current density of 40 mA cm−2 and responsivity of 0.41 A W−1 at 1550 nm under a reverse bias of −2 V. In addition, the detection wavelength range of p-Ge0.9Sn0.1/n-Si is extended to 2100 nm because of the increased Sn composition. The bandgap calculation of as-grown GeSn with various Sn compositions is carried out. It confirms that the enhanced responsivity and extended detection wavelength ranges are attributed to the reduced bandgap from 750 to 601 meV when the Sn composition is increased from 2.3% to 10%. The result shows that the transfer printing of a freestanding single-crystalline Si nanomembrane to a bulk GeSn/Ge/Si substrate can provide an excellent alternative route for realizing GeSn/Si heterojunction photodiodes.
URI: https://hdl.handle.net/10356/164351
ISSN: 2365-709X
DOI: 10.1002/admt.202201136
Rights: © 2022 Wiley-VCH GmbH. All rights reserved. This is the peer reviewed version of the following article: An, S., Huang, Y., Wu, C., Huang, P., Chang, G., Lai, J., Seo, J. & Kim, M. (2022). Single-crystalline Ge₁₋ₓSnₓ/Si p–n heterojunction photodiodes with Sn compositions up to 10%. Advanced Materials Technologies, which has been published in final form at https://doi.org/10.1002/admt.202201136. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.
Fulltext Permission: embargo_20231010
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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  Until 2023-10-10
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