Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/164357
Title: Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000nm communication and sensing applications
Authors: Kumar, Harshvardhan
Chen, Qimiao
Tan, Chuan Seng
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2023
Source: Kumar, H., Chen, Q. & Tan, C. S. (2023). Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000nm communication and sensing applications. Semiconductor Science and Technology. https://dx.doi.org/10.1088/1361-6641/acb0f5
Project: NRF–CRP19–2017–01
T2EP50121- 0001 (MOE-000180- 01)
2021-T1-002- 031 (RG112/21)
Journal: Semiconductor Science and Technology
Abstract: This work reports a novel mid-infrared (MIR) lateral Ge1-xSnx (x = 6%) waveguide-based phototransistors (PTs) on a silicon platform. A lateral device structure is proposed to enhance the optical confinement factor (OCF) and the optical power through the i-GeSn waveguide, thereby, increasing the optical responsivity of the PTs. The proposed devices are investigated using multiphysics simulation. The designed PTs are investigated in terms of the Gummel and output characteristics under both dark and illumination, 3dB bandwidth, optical gain, and responsivity. The effect of lateral scaling on various figure-of-merits of PTs is also studied and in return, helps optimize the device structure to get the highest optical gain, responsivity, and 3-dB bandwidth at 2000 nm. The theoretically optimized PT achieves the maximum optical gain of 1650 and responsivity of about 308A/W at 2000 nm, with 𝑉𝐵𝐸 = 0.3𝑉 and 𝑉𝐶𝐸 = 1 𝑉. In addition, the device exhibits a record-high 3-dB bandwidth of >55GHz. Thus, the encouraging electrical and optical performance of the proposed PT manifests it as a great potential candidate for the 2000 nm band.
URI: https://hdl.handle.net/10356/164357
ISSN: 0268-1242
DOI: 10.1088/1361-6641/acb0f5
Rights: © 2023 IOP Publishing Ltd. All rights reserved. This is an author-created, un-copyedited version of an article accepted for publication in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at https://doi.org/10.1088/1361-6641/acb0f5.
Fulltext Permission: embargo_20240113
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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