Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/164449
Title: Strain-modulated photoelectric responses from a flexible α-In₂Se₃/3R MoS₂ heterojunction
Authors: Cai, Weifan
Wang, Jingyuan
He, Yongmin
Liu, Sheng
Xiong, Qihua
Liu, Zheng
Zhang, Qing
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2021
Source: Cai, W., Wang, J., He, Y., Liu, S., Xiong, Q., Liu, Z. & Zhang, Q. (2021). Strain-modulated photoelectric responses from a flexible α-In₂Se₃/3R MoS₂ heterojunction. Nano-Micro Letters, 13(1). https://dx.doi.org/10.1007/s40820-020-00584-1
Project: 2018-T2-2-005
2018-T1-005-001
A1983c0027
Journal: Nano-Micro Letters
Abstract: Semiconducting piezoelectric α-In2Se3 and 3R MoS2 have attracted tremendous attention due to their unique electronic properties. Artificial van der Waals (vdWs) heterostructures constructed with α-In2Se3 and 3R MoS2 flakes have shown promising applications in optoelectronics and photocatalysis. Here, we present the first flexible α-In2Se3/3R MoS2 vdWs p-n heterojunction devices for photodetection from the visible to near infrared region. These heterojunction devices exhibit an ultrahigh photoresponsivity of 2.9 × 103 A W-1 and a substantial specific detectivity of 6.2 × 1010 Jones under a compressive strain of - 0.26%. The photocurrent can be increased by 64% under a tensile strain of + 0.35%, due to the heterojunction energy band modulation by piezoelectric polarization charges at the heterojunction interface. This work demonstrates a feasible approach to enhancement of α-In2Se3/3R MoS2 photoelectric response through an appropriate mechanical stimulus.
URI: https://hdl.handle.net/10356/164449
ISSN: 2311-6706
DOI: 10.1007/s40820-020-00584-1
Schools: School of Electrical and Electronic Engineering 
School of Materials Science and Engineering 
School of Physical and Mathematical Sciences 
Research Centres: Center for Micro- and Nano-Electronics
Rights: © The Author(s) 2021. Open Access. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
MSE Journal Articles
SPMS Journal Articles

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