Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/164465
Title: Improving carrier mobility in two-dimensional semiconductors with rippled materials
Authors: Ng, Hong Kuan
Du, Xiang
Suwardi, Ady
Hu, Guangwei
Ke, Yang
Zhao, Yunshan
Liu, Tao
Cao, Zhonghan
Liu, Huajun
Li, Shisheng
Cao, Jing
Zhu, Qiang
Dong, Zhaogang
Tan, Ivan Chee Kiang
Chi, Dongzhi
Qiu, Cheng-Wei
Hippalgaonkar, Kedar
Eda, Goki
Yang, Ming
Wu, Jing
Keywords: Engineering::Materials::Microelectronics and semiconductor materials
Issue Date: 2022
Source: Ng, H. K., Du, X., Suwardi, A., Hu, G., Ke, Y., Zhao, Y., Liu, T., Cao, Z., Liu, H., Li, S., Cao, J., Zhu, Q., Dong, Z., Tan, I. C. K., Chi, D., Qiu, C., Hippalgaonkar, K., Eda, G., Yang, M. & Wu, J. (2022). Improving carrier mobility in two-dimensional semiconductors with rippled materials. Nature Electronics, 5, 489-496. https://dx.doi.org/10.1038/s41928-022-00777-z
Project: A1898b0043 
Journal: Nature Electronics 
Abstract: Two-dimensional (2D) semiconductors could potentially replace silicon in future electronic devices. However, the low carrier mobility in 2D semiconductors at room temperature, caused by strong phonon scattering, remains a critical challenge. Here we show that lattice distortions can reduce electron–phonon scattering in 2D materials and thus improve the charge carrier mobility. We introduce lattice distortions into 2D molybdenum disulfide (MoS2) using bulged substrates, which create ripples in the 2D material leading to a change in the dielectric constant and a suppressed phonon scattering. A two orders of magnitude enhancement in room-temperature mobility is observed in rippled MoS2, reaching ∼900 cm2 V−1 s−1, which exceeds the predicted phonon-limited mobility of flat MoS2 of 200–410 cm2 V−1 s−1. We show that our approach can be used to create high-performance room-temperature field-effect transistors and thermoelectric devices.
URI: https://hdl.handle.net/10356/164465
ISSN: 2520-1131
DOI: 10.1038/s41928-022-00777-z
Schools: School of Materials Science and Engineering 
Organisations: Institute of Materials Research and Engineering, A*STAR 
Rights: © 2022 The Author(s), under exclusive licence to Springer Nature Limited All rights reserved. This version of the article has been accepted for publication, after peer review and is subject to Springer Nature’s AM terms of use, but is not the Version of Record and does not reflect post-acceptance improvements, or any corrections. The Version of Record is available online at: http://dx.doi.org/10.1038/s41928-022-00777-z.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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