Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/164528
Title: Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure
Authors: Wang, Xuejing
Lin, Yung-Chen
Tai, Chia-Tse
Lee, Seok Woo
Lu, Tzu-Ming
Shin, Sun Hae Ra
Addamane, Sadhvikas J.
Sheehan, Chris
Li, Jiun-Yun
Kim, Yerim
Yoo, Jinkyoung
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Source: Wang, X., Lin, Y., Tai, C., Lee, S. W., Lu, T., Shin, S. H. R., Addamane, S. J., Sheehan, C., Li, J., Kim, Y. & Yoo, J. (2022). Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure. APL Materials, 10(11), 111108-. https://dx.doi.org/10.1063/5.0119654
Journal: APL Materials
Abstract: Realizing a tubular conduction channel within a one-dimensional core-shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW heterostructure using a chemical vapor deposition coupled with vapor-liquid-solid growth mechanism. The entire NW heterostructure behaves as a p-type semiconductor, which demonstrates that the high-density carriers are confined within the 4 nm-thick Si shell and form a tubular conduction channel. These findings are confirmed by both calculations and the gate-dependent current-voltage (Id-Vg) characteristics. Atomic resolution microscopic analyses suggest a coherent epitaxial core/shell interface where strain is released by forming dislocations along the axial direction of the NW heterostructure. Additional surface passivation achieved via growing a SiGe(P)/Si/SiGe core/multishell NW heterostructure suggests potential strategies to enhance the tubular carrier density, which could be further modified by improving multishell crystallinity and structural design.
URI: https://hdl.handle.net/10356/164528
ISSN: 2166-532X
DOI: 10.1063/5.0119654
Schools: School of Electrical and Electronic Engineering 
Rights: © 2022 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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