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Title: Memristive switching and density-functional theory calculations in double nitride insulating layers
Authors: Khan, Sobia Ali
Hussain, Fayyaz
Chung, Daewon
Rahmani, Mehr Khalid
Ismail, Muhammd
Mahata, Chandreswar
Abbas, Yawar
Abbas, Haider
Choi, Changhwan
Mikhaylov, Alexey N.
Shchanikov, Sergey A.
Yang, Byung-Do
Kim, Sungjun
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2022
Source: Khan, S. A., Hussain, F., Chung, D., Rahmani, M. K., Ismail, M., Mahata, C., Abbas, Y., Abbas, H., Choi, C., Mikhaylov, A. N., Shchanikov, S. A., Yang, B. & Kim, S. (2022). Memristive switching and density-functional theory calculations in double nitride insulating layers. Micromachines, 13(9), 13091498-.
Journal: Micromachines
Abstract: In this paper, we demonstrate a device using a Ni/SiN/BN/p+-Si structure with improved performance in terms of a good ON/OFF ratio, excellent stability, and low power consumption when compared with single-layer Ni/SiN/p+-Si and Ni/BN/p+-Si devices. Its switching mechanism can be explained by trapping and de-trapping via nitride-related vacancies. We also reveal how higher nonlinearity and rectification ratio in a bilayer device is beneficial for enlarging the read margin in a cross-point array structure. In addition, we conduct a theoretical investigation for the interface charge accumulation/depletion in the SiN/BN layers that are responsible for defect creation at the interface and how this accounts for the improved switching characteristics.
ISSN: 2072-666X
DOI: 10.3390/mi13091498
Schools: School of Electrical and Electronic Engineering 
Rights: © 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// 4.0/).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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