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Title: Al₂O₃/HfO₂ nanolaminate dielectric boosting IGZO-based flexible thin-film transistors
Authors: Shi, Qiuwei
Aziz, Izzat
Ciou, Jin-Hao
Wang, Jiangxin
Gao, Dace
Xiong, Jiaqing
Lee, Pooi See
Keywords: Engineering::Materials
Issue Date: 2022
Source: Shi, Q., Aziz, I., Ciou, J., Wang, J., Gao, D., Xiong, J. & Lee, P. S. (2022). Al₂O₃/HfO₂ nanolaminate dielectric boosting IGZO-based flexible thin-film transistors. Nano-Micro Letters, 14(1).
Project: NRF-CRP13-2014-02 
Journal: Nano-Micro letters 
Abstract: Flexible thin-film transistors (TFTs) have attracted wide interest in the development of flexible and wearable displays or sensors. However, the conventional high processing temperatures hinder the preparation of stable and reliable dielectric materials on flexible substrates. Here, we develop a stable laminated Al2O3/HfO2 insulator by atomic layer deposition at a relatively lower temperature of 150 °C. A sputtered amorphous indium-gallium-zinc oxide (IGZO) with the stoichiometry of In0.37Ga0.20Zn0.18O0.25 is used as the active channel material. The flexible TFTs with bottom-gate top-contacted configuration are further fabricated on a flexible polyimide substrate with the Al2O3/HfO2 nanolaminates. Benefited from the unique structural and compositional configuration in the nanolaminates consisting of amorphous Al2O3, crystallized HfO2, and the aluminate Al–Hf–O phase, the as-prepared TFTs present the carrier mobilities of 9.7 cm2 V−1 s−1, ON/OFF ratio of ~ 1.3 × 106, subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec−1, signifying a high-performance flexible TFT, which simultaneously able to withstand the bending radius of 40 mm. The TFTs with nanolaminate insulator possess satisfactory humidity stability and hysteresis behavior in a relative humidity of 60–70%, a temperature of 25–30 °C environment. The yield of IGZO-based TFTs with the nanolaminate insulator reaches 95%.
ISSN: 2311-6706
DOI: 10.1007/s40820-022-00929-y
Schools: School of Materials Science and Engineering 
Rights: © The Author(s) 2022. Open Access. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Com mons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Com mons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit
Fulltext Permission: open
Fulltext Availability: With Fulltext
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