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Title: Wafer-scale nanostructured black silicon with morphology engineering via advanced Sn-assisted dry etching for sensing and solar cell applications
Authors: Wu, Shaoteng
Chen, Qimiao
Zhang, Lin
Ren, Huixue
Zhou, Hao
Hu, Liangxing
Tan, Chuan Seng
Keywords: Engineering::Electrical and electronic engineering
Issue Date: 2023
Source: Wu, S., Chen, Q., Zhang, L., Ren, H., Zhou, H., Hu, L. & Tan, C. S. (2023). Wafer-scale nanostructured black silicon with morphology engineering via advanced Sn-assisted dry etching for sensing and solar cell applications. Nanoscale.
Project: NRF-CRP19-2017-01
T2EP50121-0001 (MOE-000180-01)
2021-T1-002-031 (RG112/21)
Journal: Nanoscale
Abstract: Black-Si (b-Si) providing broadband light antireflection has become a versatile substrate for photodetector, photo-electric catalysis, sensor, and photovoltaic devices. However, the conventional fabrication methods suffer from single morphology, low yield, or frangibility. In this work, we present a high-yield CMOS-compatible technique to produce 6-inches wafer-scale b-Si with diverse random nanostructures. The b-Si is achieved by O2/SF6 plasma-based reactive ion etching (RIE) of the Si wafer which is coated with a GeSn layer. A stable grid of SnOxFy layer, formed during the initial GeSn etching, acts as a self-assembled hard mask for the formation of subwavelength Si nanostructures. B-Si with diverse surface morphologies, such as the nanopore, nanocone, nanohole, nanohillock, and nanowire was achieved. Furthermore, the responsivity of the b-Si metal–semiconductor–metal (MSM) photodetector at the near-infrared (NIR) wavelength range (1,000-1,200 nm) is 40-200% higher than that of planar-Si MSM photodetector with the same level of dark current, which is beneficial for the applications in photon detector, solar cell, and photocatalysis. This work not only demonstrates a new non-lithography method to fabricate wafer-scale b-Si wafers, but also may provide a novel strategy to fabricate other nanostructured surfaces materials (e.g., Ge, or III-V based compound) with morphology engineering.
ISSN: 2040-3364
DOI: 10.1039/D2NR06493F
Schools: School of Electrical and Electronic Engineering 
Organisations: Institute of Microelectronics, A*STAR
Rights: © 2023 The Royal Society of Chemistry. All rights reserved. This paper was published in Nanoscale and is made available with permission of The Royal Society of Chemistry.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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