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Title: Tensile strained direct bandgap GeSn microbridges enabled in GeSn-on-insulator substrates with residual tensile strain
Authors: Burt, Daniel
Zhang, Lin
Jung, Yongduck
Joo, Hyo-Jun
Kim, Youngmin
Chen, Melvina
Son, Bongkwon
Fan, Weijun
Ikonic, Zoran
Tan, Chuan Seng
Nam, Donguk
Keywords: Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2023
Source: Burt, D., Zhang, L., Jung, Y., Joo, H., Kim, Y., Chen, M., Son, B., Fan, W., Ikonic, Z., Tan, C. S. & Nam, D. (2023). Tensile strained direct bandgap GeSn microbridges enabled in GeSn-on-insulator substrates with residual tensile strain. Optics Letters, 48(3), 735-738.
Project: A2083c0053 
NRF-CRP19- 2017-01 
RG 115/21
MOE2018-T2-2-011 (S)
Journal: Optics Letters
Abstract: Despite having achieved drastically improved lasing characteristics by harnessing tensile strain, the current methods of introducing a sizable tensile strain into GeSn lasers require complex fabrication processes, thus reducing the viability of the lasers for practical applications. The geometric strain amplification is a simple technique that can concentrate residual and small tensile strain into localized and large tensile strain. However, the technique is not suitable for GeSn due to the intrinsic compressive strain introduced during the conventional epitaxial growth. In this Letter, we demonstrate the geometrical strain amplification in GeSn by employing a tensile strained GeSn-on-insulator (GeSnOI) substrate. This work offers exciting opportunities in developing practical wavelength-tunable lasers for realizing fully integrated photonic circuits.
ISSN: 0146-9592
DOI: 10.1364/OL.476517
Schools: School of Electrical and Electronic Engineering 
Rights: © 2023 Optica Publishing Group. All Rights Reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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