Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/165327
Title: Active ultrahigh-Q (0.2 × 10⁶) THz topological cavities on a chip
Authors: Kumar, Abhishek
Gupta, Manoj
Pitchappa, Prakash
Tan, Thomas CaiWei
Chattopadhyay, Udvas
Ducournau, Guillaume
Wang, Nan
Chong, Yidong
Singh, Ranjan
Keywords: Science::Physics::Optics and light
Issue Date: 2022
Source: Kumar, A., Gupta, M., Pitchappa, P., Tan, T. C., Chattopadhyay, U., Ducournau, G., Wang, N., Chong, Y. & Singh, R. (2022). Active ultrahigh-Q (0.2 × 10⁶) THz topological cavities on a chip. Advanced Materials, 34(27), 2202370-. https://dx.doi.org/10.1002/adma.202202370
Project: NRF-CRP23-2019-0005 
Journal: Advanced Materials
Abstract: Rapid scaling of semiconductor devices has led to an increase in the number of processor cores and integrated functionalities onto a single chip to support the growing demands of high-speed and large-volume consumer electronics. To meet this burgeoning demand, an improved interconnect capacity in terms of bandwidth density and active tunability is required for enhanced throughput and energy efficiency. Low-loss terahertz silicon interconnects with larger bandwidth offer a solution for the existing inter-/intrachip bandwidth density and energy-efficiency bottleneck. Here, a low-loss terahertz topological interconnect-cavity system is presented that can actively route signals through sharp bends, by critically coupling to a topological cavity with an ultrahigh-quality (Q) factor of 0.2 × 106 . The topologically protected large Q factor cavity enables energy-efficient optical control showing 60 dB modulation. Dynamic control is further demonstrated of the critical coupling between the topological interconnect-cavity for on-chip active tailoring of the cavity resonance linewidth, frequency, and modulation through complete suppression of the back reflection. The silicon topological cavity is complementary metal-oxide-semiconductor (CMOS)-compatible and highly desirable for hybrid electronic-photonic technologies for sixth (6G) generation terahertz communication devices. Ultrahigh-Q cavity also paves the path for designing ultrasensitive topological sensors, terahertz topological integrated circuits, and nonlinear topological photonic devices.
URI: https://hdl.handle.net/10356/165327
ISSN: 0935-9648
DOI: 10.1002/adma.202202370
Schools: School of Physical and Mathematical Sciences 
Research Centres: Centre for Disruptive Photonic Technologies (CDPT) 
The Photonics Institute 
Rights: © 2022 Wiley-VCH GmbH. All rights reserved.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

SCOPUSTM   
Citations 10

40
Updated on Feb 13, 2024

Web of ScienceTM
Citations 10

28
Updated on Oct 29, 2023

Page view(s)

95
Updated on Feb 20, 2024

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.