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Title: Integrated photonic devices for realising photonic quantum computing: part 1
Authors: Lee, Wen Wei
Keywords: Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2023
Publisher: Nanyang Technological University
Source: Lee, W. W. (2023). Integrated photonic devices for realising photonic quantum computing: part 1. Final Year Project (FYP), Nanyang Technological University, Singapore.
Project: A2192-221
Abstract: Transition Metal Dichalcogenides (TMDs) have emerged as a promising class of materials for developing Photonic Integrated Circuits (PICs) and practical quantum processors, mainly due to their unique advantages, such as convenient on-chip integration. In this work, we study the effects of strain on the emission wavelength and carrier lifetime in 2D materials, focusing on WSe2 and its strong light-matter interaction, tunable emission, and high electron mobility. We demonstrate the red-shifting of the emission wavelength and reduced carrier lifetime by adding stressor layers. We show that the geometry of stressors can adjust the amount of wavelength shift, suggesting the possibility of developing wavelength-tunable light sources. Experimental work involving the fabrication of CdSe quantum dots and the analysis of PL emission peaks of WSe2 and MoS2 heterostructures provides valuable insights into the role of twist angle on the optical properties of TMD heterostructures. A measurement setup has been designed and utilised to characterise the fabricated samples, comprising an optical pump for photoluminescence emission, a spectrometer for frequency analysis, and a charge-coupled device (CCD) spectroscopy camera for spectra and temporal measurements.
Schools: School of Electrical and Electronic Engineering 
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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