Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/16743
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dc.contributor.authorQiu, Zhaoxiang.-
dc.date.accessioned2009-05-28T03:12:55Z-
dc.date.available2009-05-28T03:12:55Z-
dc.date.copyright2009en_US
dc.date.issued2009-
dc.identifier.urihttp://hdl.handle.net/10356/16743-
dc.description.abstractIdeal MOSFET is intrinsically symmetrical in source and drain, and all existing models describing MOSFETs are built with this structural symmetry. There is increasing demand to exploit asymmetrical structures for performance optimization, such as asymmetric channel implant, LDD spacer process, and dual-material-gate MOSFETs. In this report, MOSFETs with source/drain asymmetry will be explored using Matlab numerical simulations in comparison with the symmetric counterpart. Through the project, students will gain insights into transistor operation and modeling, and extend novel ideas for real applications.en_US
dc.format.extent53 p.en_US
dc.language.isoenen_US
dc.rightsNanyang Technological University-
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Semiconductorsen_US
dc.titleNumerical exploration of asymmetrical MOSFETsen_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorZhou Xingen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeBachelor of Engineeringen_US
item.grantfulltextrestricted-
item.fulltextWith Fulltext-
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)
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