Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/16743
Title: Numerical exploration of asymmetrical MOSFETs
Authors: Qiu, Zhaoxiang.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2009
Abstract: Ideal MOSFET is intrinsically symmetrical in source and drain, and all existing models describing MOSFETs are built with this structural symmetry. There is increasing demand to exploit asymmetrical structures for performance optimization, such as asymmetric channel implant, LDD spacer process, and dual-material-gate MOSFETs. In this report, MOSFETs with source/drain asymmetry will be explored using Matlab numerical simulations in comparison with the symmetric counterpart. Through the project, students will gain insights into transistor operation and modeling, and extend novel ideas for real applications.
URI: http://hdl.handle.net/10356/16743
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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