Nanosphere lithography for ordered-arrayed semiconductor nanowire formation via top-down method

Abstract

Vertically aligned group IV semiconductor nanowires are great interest of research recently because of their promising applications in future large–density electronics and photonics and their compatibility with current Si dominated technology.

In this project, nanosphere lithography will be explored for group IV nanowires formation via etching method. A monolayer of nanospheres will self-assembly on the substrate. The nanospheres will be trimmed by oxygen RIE method followed by pattern transferring. The vertical nanowires can then be formed by another etching method. The size, density of nanowires can be controlled.